Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.

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Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.329.159 ◽

2012 ◽

Vol 329 ◽

pp. 159-164 ◽

Cited By ~ 4

Author(s):

Rosniza Hussin ◽

Xiang Hui Hou ◽

Kwang Leong Choy

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Growth Mechanism ◽

Semiconductor Industry ◽

Hexagonal Wurtzite Structure ◽

Atomic Layer ◽

Xrd Analysis ◽

Zno Thin Films ◽

Zno Films ◽

Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

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Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

Materials Science Forum ◽

10.4028/www.scientific.net/msf.510-511.670 ◽

2006 ◽

Vol 510-511 ◽

pp. 670-673 ◽

Cited By ~ 2

Author(s):

Chong Mu Lee ◽

Yeon Kyu Park ◽

Anna Park ◽

Choong Mo Kim

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Xrd Analysis ◽

Nitrogen Atmosphere ◽

Zno Thin Films ◽

Zno Films ◽

Annealing Atmosphere ◽

Zno Film ◽

Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

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Characterization of ZnO Thin Films Fabricated by Atomic Layer Deposition with Various Temperatures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.650.18 ◽

2013 ◽

Vol 650 ◽

pp. 18-23 ◽

Cited By ~ 1

Author(s):

Tsai Cheng Li ◽

Rwei Ching Chang ◽

Pei Sin Jhu

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Zno Thin Films ◽

Zno Films ◽

Sputtered Films ◽

Layer Deposition ◽

Substrate Temperatures

Atomic layer deposition (ALD) is utilized to grow high performance zinc oxide (ZnO) thin films, where the effects of ALD process temperature on the thin film properties are also studied in this work. Some major properties of the ALD ZnO films are characterized and compared with those of sputtered ZnO films. Significant differences are observed that the electrical resistances of the ALD ZnO films are largely improved, while the optical transmittances also increase. Nevertheless, the adhesion and mechanical properties of the ALD films are worse than the sputtered films because of the weak bonding in the ALD process. For various substrate temperatures, the ALD ZnO films with 200°C behave the best performance.

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Controlling electrical and optical properties of zinc oxide thin films grown by thermal atomic layer deposition with oxygen gas

Results in Materials ◽

10.1016/j.rinma.2020.100088 ◽

2020 ◽

Vol 6 ◽

pp. 100088 ◽

Cited By ~ 1

Author(s):

Tai Nguyen ◽

Noureddine Adjeroud ◽

Mael Guennou ◽

Jérôme Guillot ◽

Yves Fleming ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Optical Properties ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Oxide Thin Films ◽

Electrical And Optical Properties ◽

Layer Deposition ◽

Oxygen Gas

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Zinc Oxide Films with High Transparency and Crystallinity Prepared by a Low Temperature Spatial Atomic Layer Deposition Process

Nanomaterials ◽

10.3390/nano10030459 ◽

2020 ◽

Vol 10 (3) ◽

pp. 459 ◽

Cited By ~ 1

Author(s):

Ming-Jie Zhao ◽

Zhi-Tao Sun ◽

Chia-Hsun Hsu ◽

Pao-Hsun Huang ◽

Xiao-Ying Zhang ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Refractive Index ◽

Atomic Layer Deposition ◽

Substrate Temperature ◽

Atomic Layer ◽

Infrared Light ◽

Zno Thin Films ◽

Process Window ◽

Layer Deposition

Zinc oxide (ZnO) attracts much attention owing to its remarkable electrical and optical properties for applications in optoelectronics. In this study, ZnO thin films were prepared by spatial atomic layer deposition with diethylzinc and water as precursors. The substrate temperature was varied from 55 to 135 °C to investigate the effects on the optical, electrical, and structural properties of the films. All ZnO samples exhibit an average transmittance in visible and near-infrared light range exceeding 80% and a resistivity in the range of (3.2–9.0) × 10−3 Ω·cm when deposited on a borosilicate glass with a refractive index of ≈1.52. The transmittance, band gap, refractive index, and extinction coefficient are rarely affected, while the resistivity only slightly decreases with increasing temperature. This technique provides a wide process window for depositing ZnO thin films. The results revealed that the films deposited at a substrate of 55 °C were highly crystalline with a preferential (1 0 0) orientation. In addition, the grains grow larger as the substrate temperature increases. The electrical properties and reliability of ZnO/PET samples are also studied in this paper.

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Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Usingthe Zn Alkoxide Precursor Methylzinc Isopropoxide

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.ic47 ◽

2008 ◽

Vol 8 (9) ◽

pp. 4856-4859 ◽

Cited By ~ 22

Author(s):

Ki-Seok An ◽

Wontae Cho ◽

Byung Kook Lee ◽

Sun Sook Lee ◽

Chang Gyoun Kim

Keyword(s):

Thin Films ◽

Growth Rate ◽

Atomic Layer Deposition ◽

Substrate Temperature ◽

Deep Level ◽

Atomic Layer ◽

Zno Thin Films ◽

Zno Films ◽

Layer Deposition ◽

Doped Zno

Undoped and Al-doped ZnO thin films have been prepared by atomic layer deposition (ALD) using the Zn precursor methylzinc isopropoxide [MZI, (CH3)Zn(OCH(CH3)2)] with water (H2O). Dimethylaluminum isopropoxide (DMAI) was used as an Al precursor. The self-limiting ALD process via alternate surface reactions of MZI and H2O was confirmed by thickness measurements of the ZnO films with varying MZI supply time and numbers of MZI-H2O ALD cycles. Under optimal reaction conditions, the growth rate of the ZnO films was 1.9∼2.0 Å/cycle in the substrate temperature range of 160∼200 °C and the maximum growth rate reached about 2.58 Å/cycle at 240 °C. Room temperature photoluminescence (PL) measurements revealed a strong free excitonic peak at 3.27 eV with almost negligible deep level emission. Resistivities of ZnO films were measured to be 5 × 10−3 ∼3.2 × 10−3 Ωcm depending on the substrate temperature. By Al-doping, the resistivity was minimized to ∼1 35 × 10−4 Ωcm.

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Pulsed heating atomic layer deposition (PH-ALD) for epitaxial growth of zinc oxide thin films on c-plane sapphire

Dalton Transactions ◽

10.1039/d1dt03581a ◽

2021 ◽

Author(s):

Brandon Deane Piercy ◽

Jamie Pearce Wooding ◽

Shawn Gregory ◽

Mark D. Losego

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Atomic Layer Deposition ◽

Epitaxial Growth ◽

Atomic Layer ◽

Zno Thin Films ◽

Temperature Sensitive ◽

Pulsed Heating ◽

Layer Deposition

An in situ pulsed heating atomic layer deposition (PH-ALD) technique is used to grow heteroepitaxial ZnO thin films on c-plane sapphire from temperature-sensitive metalorganic precursors. During metalorganic precursor delivery, the...

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Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

Journal of Materials Chemistry C ◽

10.1039/d0tc05626j ◽

2021 ◽

Author(s):

Sungho Park ◽

Byung Jun Kim ◽

Tae Yeon Kim ◽

Eui Young Jung ◽

Kyu-Myung Lee ◽

...

Keyword(s):

Zinc Oxide ◽

Atomic Layer Deposition ◽

Quantum Dot ◽

Aluminum Oxide ◽

Thin Layer ◽

Visible Light ◽

Atomic Layer ◽

Zno Films ◽

Additional Layer ◽

Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

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