Low‐voltage and high‐speed stand‐alone multiple‐input complex gates for error correction coding applications

2020 ◽  
Author(s):  
Maliheh Rafiee ◽  
Mohammad‐Bagher Ghaznavi‐Ghoushchi
Keyword(s):  
Error Correction ◽  
High Speed ◽  
Low Voltage ◽  
Error Correction Coding ◽  
Multiple Input

High-Speed and Anti-Interference Parallel Bus Design on Board

2012 ◽  
Vol 182-183 ◽  
pp. 515-519
Author(s):  
Hong Qi Yu ◽  
Sen Liu ◽  
Nan Li ◽  
Meng Wang ◽  
Jin Ling Xing ◽  
...  
Keyword(s):  
Error Correction ◽  
Negative Feedback ◽  
Error Rate ◽  
High Speed ◽  
Low Voltage ◽  
Final Test ◽  
Random Code ◽  
Error Correction Coding ◽  
Differential Transmission ◽  
Synchronous Technology

This paper presents a high-speed and anti-interference parallel bus design on board, which takes a series of measures, including source-synchronous technology, the negative feedback technology, low-voltage differential transmission technology, error correction coding and pseudo-random code technology to improve the environment for parallel communication, increase communication speed, decrease error rate .The final test shows the communication speed has achieved 10 Gbps and the error rate has reduced to 10-7.

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Sign in / Sign up

Export Citation Format

Share Document