Operating properties of thin-film slot antennas at 2.5-THz submillimeter wave band

2002 ◽  
Vol 85 (11) ◽  
pp. 8-15 ◽  
Author(s):  
Yasuhiko Abe ◽  
Yoshizumi Yasuoka
Keyword(s):  
Thin Film ◽  
Submillimeter Wave ◽  
Wave Band ◽  
Slot Antennas ◽  
Operating Properties

Millimeter- and Submillimeter-Wave Band Receiver on Hot Electrons

2009 ◽  
Vol 68 (6) ◽  
pp. 549-554
Author(s):  
Yu. Ye. Kamenev ◽  
F. F. Sizov ◽  
V. N. Dobrovolsky
Keyword(s):  
Submillimeter Wave ◽  
Hot Electrons ◽  
Wave Band

Quasi-Optical Sectional Waveguide Taper for Submillimeter Wave Band

2003 ◽  
Vol 60 (7-9) ◽  
pp. 55-59 ◽  
Author(s):  
V. K. Kiselyov ◽  
S.V. Mizrakhi
Keyword(s):  
Submillimeter Wave ◽  
Wave Band ◽  
Waveguide Taper

Thin-Film Slot Antennas for 2.5 THz Submillimeter Radiation

1996 ◽  
Vol 35 (Part 2, No. 2B) ◽  
pp. L266-L268 ◽  
Author(s):  
Takashi Shimizu ◽  
Yasuhiko Abe ◽  
Yoshizumi Yasuoka ◽  
Kenji Gamo
Keyword(s):  
Thin Film ◽  
Slot Antennas ◽  
Submillimeter Radiation

scholarly journals A submillimeter frequency multiplier. Part 1. Conditions of simultaneous two-mode excitation in the slow-wave structure of the o-type oscillator

2020 ◽  
Vol 25 (4) ◽  
pp. 38-53
Author(s):  
M. Mil’cho ◽  
◽  
K. Ilyenko
Keyword(s):  
Slow Wave ◽  
Wave Structure ◽  
Slow Wave Structure ◽  
Submillimeter Wave ◽  
Diffraction Radiation ◽  
Wave Band ◽  
Frequency Multipliers ◽  
Frequency Multiplication ◽  
Vacuum Tube ◽  
Simultaneous Excitation

Subject and Purpose. A special need for oscillators amenable to operation in the short-wave end of the submillimeter wave band sends us in search for new ways of their development. A proposal exists related to vacuum-tube frequency multipliers based on the backward-wave oscillator (BWO) or its variant, the clinotron. Sometimes a simultaneous excitation of two different-frequency oscillations is experimentally observed in ordinary millimeter wave clinotrons, orotrons and diffraction radiation oscillators. The aim of the present study is to examine whether those operational regimes can be implemented in the creation of electronic frequency multipliers in the submillimeter wave band. Methods and Methodology. The research method is a theoretical analysis of the process of simultaneous interaction of the electron beam with the electromagnetic fields of two modes in the BWO slow-wave structure. The aim is finding relationships to impose on the slow-wave structure parameters and the BWO operation figures and thus furnish a simultaneous excitation of the two modes. The obtained relationships are tested against published experimental results. Results. Two conditions of simultaneous mode excitations have been formulated, requiring (i) equal velocities of the operating spatial harmonics and (ii) their strict frequency multiplicity. Handy diagrams have been constructed, which made it possible to build frequency multiplication schemes with any multiplicity. The rigorous analytical method of comb dispersion calculation has been generalized to the higher passbands of large numbers. The calculation results have been compared with relevant experimental data, lending support to the validity of the obtained formulas to describe the frequency multiplication regime. Conclusion. A possibility has been theoretically shown of designing submillimeter vacuum-tube frequency multipliers upon clinotron-type oscillators with a single slow-wave structure. The regime of simultaneous generation of two given frequencies requires that the system dispersion in different passbands be controlled by moving a screen over the comb-type slow-wave structure.

Micromachined Interfaces for Metrology and Packaging Applications in the Submillimeter-Wave Band

2017 ◽  
Vol 2017 (DPC) ◽  
pp. 1-36 ◽  
Author(s):  
Robert M. Weikle ◽  
H. Li ◽  
A. Arsenovic ◽  
S. Nadri ◽  
L. Xie ◽  
...  
Keyword(s):  
High Performance ◽  
Measurement Techniques ◽  
Submillimeter Wave ◽  
High Resistivity ◽  
Wave Band ◽  
Frequency Range ◽  
Low Loss ◽  
Calibration Standards ◽  
Characterization Methods ◽  
Waveguide Components

The continued emergence of new terahertz devices has created a need for improved approaches to packaging, integration, and measurement tools for diagnostics and characterization in this portion of the spectrum. Rectangular waveguide has for many years been the primary transmission medium for terahertz and submillimeter-wave systems operating from 300 GHz to 1 THz, with the UG-387 flange the most common interface for mating waveguide components over this frequency range. Alignment of UG-387 flanges is accomplished with pins and alignment holes that are placed around the flange perimeter and, under the standard MIL SPECS tolerances, misalignments of up to 6 mils (150 microns) are possible as a result of practical milling tolerances. With the emergence of vector network analyzers operating beyond 1 THz, such misalignment of waveguide mating flanges is not negligible and is recognized as a fundamental issue limiting calibration and measurement precision at frequencies greater than 300 GHz. In response to this issue, a number of new waveguide flange concepts have been investigated to reduce flange misalignment and the P1785 IEEE Standard was recently issued to recommend designs for waveguide interfaces at frequencies above 110 GHz. Among the new flange concepts being proposed is a modified UG-387 that utilizes tighter machining tolerances and the ring-centered flange where alignment is accomplished using a precision coupling ring that fits over raised bosses that are centered on each waveguide. This paper discusses the new interface concepts that are being developed to address waveguide flange misalignment as well as emerging micromachined interconnects, calibration standards and heterogeneous integration methods that are being applied to implement low-loss and high-performance circuit architectures for the terahertz frequency range. Among the technologies that will be described are (1) design and characterization methods for the new ring-centered waveguide standard, (2) micromachined waveguide components and calibration standards for the terahertz band, (3) silicon-based micromachined probe structures for direct-contact interfacing and metrology, and (4) epitaxial transfer of III-V semiconductor material onto high-resistivity silicon to realize a low-loss platform for integration of terahertz components. Details of the processing methods used to realize these components as well as measurement techniques for assessing their performance will be described.

Conception of Development of Millimeter and Submillimeter Wave Band Radio Telecommunication Systems

2008 ◽  
Vol 67 (17) ◽  
pp. 1549-1564 ◽  
Author(s):  
Mikhail E. Ilchenko ◽  
T. N. Narytnik ◽  
Anatoly Ivanovich Fisun ◽  
Oleg I. Belous
Keyword(s):  
Submillimeter Wave ◽  
Wave Band ◽  
Telecommunication Systems

A Cost-Effective Phaseless Pattern Measurement Method for a CP Antenna in a Submillimeter-Wave Band

2017 ◽  
Vol 16 ◽  
pp. 1683-1686 ◽  
Author(s):  
Shubhendu Bhardwaj ◽  
Niru K. Nahar ◽  
John L. Volakis
Keyword(s):  
Measurement Method ◽  
Cost Effective ◽  
Submillimeter Wave ◽  
Wave Band
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