Speed improvement of FPGA by mixing multiple-gate-width routing switches

2005 ◽  
Vol 88 (7) ◽  
pp. 14-22
Author(s):  
Yohei Matsumoto ◽  
Akira Masaki
Keyword(s):  
Gate Width ◽  
Routing Switches

In-Memory Computing with TCAM for Packet Identification in the Buffer of Routing Switches

2020 ◽  
Author(s):  
Xiao Zhang ◽  
Zenan Huang ◽  
Honyin Luo ◽  
Zhixin Zhou ◽  
Zhong Ma ◽  
...  
Keyword(s):  
Routing Switches

A High-Power AlGaN/GaN Hetero Field-Effect Transistor

2001 ◽  
Vol 693 ◽  
Author(s):  
Seikoh Yoshida ◽  
Hirotatsu Ishii
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Breakdown Field ◽  
Gate Width ◽  
Gas Source ◽  
Large Current ◽  
Effect Transistor ◽  
Current Operation ◽  
Dimensional Electron Gas ◽  
State Resistance

AbstractAn AlGaN/GaN hetero field effect transistor (HFET) was operated at 20 A. Its on-state resistance was lower than that of a Si-based FET. GaN and related materials were grown by gas-source molecular beam epitaxy (GSMBE). Sapphire substrates were used for GaN growth. An undoped GaN/Al0.2Ga0.8N heterostructure wasgrown on the substrate. The sheet carrier density of two dimensional electron gas was 1x1013 cm2 and the mobility was 1200 cm2/Vs at room temperature. The breakdown field of undoped high resistive GaN layer was about 2.0 MV/cm. Al0.2Ga0.8N/GaN HFET for a large current operation was fabricated. The gate width was 20 cm and thegate length was 2000 nm. The electrode material of the source and the drain was Al/Ti/Au and the Schottky electrodes were Pt/Au. The distance between the source and the drain was 6000 nm. The maximum breakdown voltage of gate and source was 600 V. The on-state resistance of the HFET was about 2 mohm•cm2 at 100 V. The transconductance (gm) of this HFET was about 120 mS/mm. It was confirmed that the HFET with a gate width of20 cm could be operated at the condition of a large current operation.

Measuring the impact of CCD gate width on the brighter-fatter effect

2020 ◽  
Author(s):  
Daniel P. Weatherill ◽  
Daniel Wood ◽  
Ian Shipsey ◽  
Richard Plackett ◽  
Andrea Loreti ◽  
...  
Keyword(s):  
Gate Width ◽  
The Impact

High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells

2014 ◽  
Vol 35 (3) ◽  
pp. 034012
Author(s):  
Yang Tang ◽  
Zuochang Ye ◽  
Yan Wang
Keyword(s):  
Millimeter Wave ◽  
High Efficiency ◽  
Gate Width

On-chip cyclic-AWG-based 12  ×  12 silicon wavelength routing switches with minimized port-to-port insertion loss fluctuation

2018 ◽  
Vol 6 (5) ◽  
pp. 380 ◽  
Author(s):  
Zepeng Pan ◽  
Songnian Fu ◽  
Luluzi Lu ◽  
Dongyu Li ◽  
Weijie Chang ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Wavelength Routing ◽  
Routing Switches ◽  
On Chip

On the Delay of a CNTFET with Undeposited CNTs by Gate Width Adjustment

2013 ◽  
Vol 29 (3) ◽  
pp. 261-273
Author(s):  
Geunho Cho ◽  
Fabrizio Lombardi
Keyword(s):  
Gate Width
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