Accompanied arrangement effect of stretched gate width and dummy diffusion region on strained silicon PMOSFETs

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

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Atomistic Calculation of Elastic Moduli in Strained Silicon

10.21236/ada466493 ◽

2007 ◽

Author(s):

Richard Zhu ◽

Ernian Pan ◽

Peter W. Chung ◽

Xinli Cai ◽

Kim M. Liew ◽

...

Keyword(s):

Elastic Moduli ◽

Strained Silicon ◽

Atomistic Calculation

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Hydrogenation of nitrogen oxide on platinum-carbon catalysts in acidic medium

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19812669 ◽

1981 ◽

Vol 46 (11) ◽

pp. 2669-2675 ◽

Cited By ~ 5

Author(s):

Ivo Paseka

Keyword(s):

Nitrogen Oxide ◽

Acidic Medium ◽

Diffusion Region ◽

Acid Solutions ◽

Experimental Conditions ◽

Platinum Content ◽

Kinetically Controlled ◽

Partial Pressures ◽

Carbon Catalysts

Hydrogenation of nitrogen oxide in acid solutions on Pt-C catalysts proceeds in dependence on experimental conditions either in purely diffusion region or in the diffusion and kinetically controlled region. The boundary between these two processes shifts to the higher ratio of NO to H2 partial pressures with increasing platinum content and decreasing intensity of agitation.

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Kinetics of temperature-programmed reactivation of a hydrodesulphurization catalyst

Collection of Czechoslovak Chemical Communications ◽

10.1135/cccc19833340 ◽

1983 ◽

Vol 48 (12) ◽

pp. 3340-3355 ◽

Cited By ~ 2

Author(s):

Pavel Fott ◽

Pavel Šebesta

Keyword(s):

Carbon Dioxide ◽

Thermal Analysis ◽

Differential Thermal Analysis ◽

Thin Layer ◽

Kinetic Parameters ◽

Diffusion Region ◽

Reaction Heat ◽

Gaseous Products ◽

Temperature Programmed ◽

Kinetics Of

The kinetic parameters of reactivation of a carbonized hydrodesulphurization (HDS) catalyst by air were evaluated from combined thermogravimetric (TG) and differential thermal analysis (DTA) data. In addition, the gaseous products leaving a temperature-programmed reactor with a thin layer of catalyst were analyzed chromatographically. Two exothermic processes were found to take part in the reactivation, and their kinetics were described by 1st order equations. In the first process (180-400 °C), sulphur in Co and Mo sulphides is oxidized to sulphur dioxide; in the second process (300-540 °C), in which the essential portion of heat is produced, the deposited carbon is oxidized to give predominantly carbon dioxide. If the reaction heat is not removed efficiently enough, ignition of the catalyst takes place, which is associated with a transition to the diffusion region. The application of the obtained kinetic parameters to modelling a temperature-programmed reactivation is illustrated on the case of a single particle.

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