Morphological structure of silica sulfuric acid and Nafion composite membrane using electrostatic force microscopy

2021 ◽  
Author(s):  
Osung Kwon ◽  
Kwangjin Oh ◽  
JaeHyoung Park ◽  
Sam Park ◽  
Tae Gwan Lee ◽  
...  
Keyword(s):  
Sulfuric Acid ◽  
Composite Membrane ◽  
Electrostatic Force ◽  
Morphological Structure ◽  
Electrostatic Force Microscopy ◽  
Silica Sulfuric Acid ◽  
Force Microscopy

scholarly journals Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

2019 ◽  
Vol 10 ◽  
pp. 617-633 ◽  
Author(s):  
Aaron Mascaro ◽  
Yoichi Miyahara ◽  
Tyler Enright ◽  
Omur E Dagdeviren ◽  
Peter Grütter
Keyword(s):  
Atomic Force Microscopy ◽  
Electrostatic Force ◽  
Oscillation Period ◽  
Electrostatic Force Microscopy ◽  
Time Varying ◽  
Time Resolved ◽  
Battery Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

scholarly journals Broadband nanodielectric spectroscopy by means of amplitude modulation electrostatic force microscopy (AM-EFM)

2011 ◽  
Vol 111 (8) ◽  
pp. 1366-1369 ◽  
Author(s):  
G.A. Schwartz ◽  
C. Riedel ◽  
R. Arinero ◽  
Ph. Tordjeman ◽  
A. Alegría ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

scholarly journals Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

2018 ◽  
Vol 4 (2) ◽  
pp. 77-85
Author(s):  
Deepak Bhatia ◽  
Sandipta Roy ◽  
S. Nawaz ◽  
R.S. Meena ◽  
V.R. Palkar
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Microelectromechanical Systems ◽  
Electrostatic Force ◽  
Charge Trapping ◽  
Electrostatic Force Microscopy ◽  
Zno Films ◽  
Phase Dependence ◽  
Force Microscopy ◽  
Electric Charge Distribution

In this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi0.7Dy0.3FeO3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

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