Polypropylene nanocomposites with various functionalized-multiwalled nanotubes: thermomechanical properties, morphology, gas permeation, and optical transparency

2010 ◽  
Vol 49 (3) ◽  
pp. 244-254 ◽  
Author(s):  
Jeong-Ho Ko ◽  
Choon Sup Yoon ◽  
Jin-Hae Chang
2007 ◽  
Vol 1056 ◽  
Author(s):  
A. Kanapitsas ◽  
E. Logakis ◽  
C. Pandis ◽  
I. Zuburtikudis ◽  
P. Pissis ◽  
...  

ABSTRACTThe purpose of this work is to examine the dielectric, electrical and thermo-mechanical properties of multi-walled carbon nanotubes (MWCNT) filled polypropylene nanocomposites formed by melt-mixing. To that aim dielectric relaxation spectroscopy (DRS) and dymamic mechanical analysis (DTMA) were employed. The results are discussed in terms of nucleating action of MWCNT and interfacial polymer-filler interactions. Special attention is paid to percolation aspects by both ac conductivity measurements for the samples which are above the percolation threshold and permittivity measurements for the samples which are below percolation threshold.


Polymers ◽  
2021 ◽  
Vol 13 (16) ◽  
pp. 2673
Author(s):  
Vincenzo Titone ◽  
Maria Chiara Mistretta ◽  
Luigi Botta ◽  
Francesco Paolo La Mantia

This work investigates the effects of very small amounts of fumed silica on the morphology and on the rheological and mechanical behaviour of polypropylene nanocomposites and on their photo-oxidation behaviour. Polypropylene nanocomposites were prepared using a twin-screw corotating extruder with 0, 1 and 2 wt/wt% of SiO2. Morphological, mechanical, thermomechanical and rheological properties were examined. It was found that the viscosity of the matrix is reduced by the presence of the silica nanoparticles, suggesting a poor adhesion between the two phases and probably some lubricating effect. On the contrary, the mechanical and, in particular, the thermomechanical properties of the matrix are considerably improved by the presence of the silica. In particular, elastic modulus and tensile strength increases remarkably, and this effect becomes more and more remarkable with an increasing temperature. As for the photo-oxidation behaviour, the presence of silica improves the photostability of the polypropylene matrix. This effect has been attributed to both the barrier to the oxygen and to the absorbance of the UV radiation from the silica nanoparticles. Finally, no significant effect of the silica nanoparticles has been put in evidence on the crystallisation behaviour of the polypropylene. As for the effect of the silica content, the difference in the properties of the two nanocomposites is relatively small and all the measured properties depend much less than linearly with its amount. This has been correlated with the reaggregation of the nanoparticles that, having a larger size, decrease the contact area between the matrix and the filler.


MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.


2015 ◽  
Vol E98.C (2) ◽  
pp. 127-128 ◽  
Author(s):  
Asami OHTAKE ◽  
Seiko UCHINO ◽  
Kunio AKEDO ◽  
Masanao ERA ◽  
Koichi SAKAGUCHI

2020 ◽  
pp. 58-66
Author(s):  
N. T. Kakhramanov ◽  
◽  
I. V. Bayramova ◽  
S. S. Pesetsky ◽  
◽  
...  

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