A comprehensive investigation of the structural properties of ferroelectric PbZr0.2 Ti0.8 O3 thin films grown by PLD

2009 ◽  
Vol 206 (8) ◽  
pp. 1799-1803 ◽  
Author(s):  
David Walker ◽  
Pam A. Thomas ◽  
Steve P. Collins
AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  

2015 ◽  
Vol 61 ◽  
pp. 26-31 ◽  
Author(s):  
E.B. Araújo ◽  
B.O. Nahime ◽  
M. Melo ◽  
F. Dinelli ◽  
F. Tantussi ◽  
...  

2008 ◽  
Vol 92 (9) ◽  
pp. 1025-1029 ◽  
Author(s):  
Bo Chen ◽  
Dongfang Yang ◽  
Paul A. Charpentier ◽  
Suwas Nikumb

2010 ◽  
Vol 518 (15) ◽  
pp. 4225-4230 ◽  
Author(s):  
A.S. Ingason ◽  
A.K. Eriksson ◽  
E. Lewin ◽  
J. Jensen ◽  
S. Olafsson

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.


2012 ◽  
Vol 520 (9) ◽  
pp. 3499-3504 ◽  
Author(s):  
S.S. Modak ◽  
S.N. Kane ◽  
A. Gupta ◽  
F. Mazaleyrat ◽  
M. LoBue ◽  
...  

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