A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor
2016 ◽
Vol 214
(1)
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pp. 1600504
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2015 ◽
Vol 36
(4)
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pp. 381-383
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2017 ◽
Vol 38
(10)
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pp. 1421-1424
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2009 ◽
Vol 48
(8)
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pp. 081002
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2021 ◽
2021 ◽