Influence of the carrier behaviors in p-GaN gate on the threshold voltage instability in the normally off high electron mobility transistor

2021 ◽  
Vol 119 (6) ◽  
pp. 063501
Author(s):  
Xin Chen ◽  
Yaozong Zhong ◽  
Yu Zhou ◽  
Shuai Su ◽  
Shumeng Yan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Voltage Instability

scholarly journals A Novel GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor Featuring Vertical Gate Structure

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 848
Author(s):  
Zhonghao Sun ◽  
Huolin Huang ◽  
Nan Sun ◽  
Pengcheng Tao ◽  
Cezhou Zhao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
Computer Aided Design ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
Uniform Electric Field ◽  
High Threshold ◽  
High Electron ◽  
High Electron Mobility

A novel structure scheme by transposing the gate channel orientation from a long horizontal one to a short vertical one is proposed and verified by technology computer-aided design (TCAD) simulations to achieve GaN-based normally-off high electron mobility transistors (HEMTs) with reduced on-resistance and improved threshold voltage. The proposed devices exhibit high threshold voltage of 3.1 V, high peak transconductance of 213 mS, and much lower on-resistance of 0.53 mΩ·cm2 while displaying better off-state characteristics owing to more uniform electric field distribution around the recessed gate edge in comparison to the conventional lateral HEMTs. The proposed scheme provides a new technical approach to realize high-performance normally-off HEMTs.

3D Simulation and Optimization of Characteristics of Al0.1Ga0.9N/In0.2Ga0.8N High Electron Mobility Transistor with B0.03Ga0.97N Back-Barrier Layer

2021 ◽  
Author(s):  
Fatima Zahra Bechlaghem ◽  
Abedelkader Hamdoune
Keyword(s):  
Barrier Layer ◽  
Threshold Voltage ◽  
Electron Mobility ◽  
Oscillation Frequency ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Maximum Oscillation Frequency ◽  
Simulation And Optimization

Abstract The objective of this paper is to simulate the effect of a BGaN back-barrier on performances of a high electron mobility transistor (HEMT) based on AlGaN/InGaN, by using TCAD 3D Silvaco simulator. We simulate some DC and AC characteristics; we note that with only 60 nm BGaN back-barrier layer and 3% of boron in BGaN, HEMT shows improvement of 33.34% in the maximum drain current, 64.7 % in the transconductance, 19% in the threshold voltage, 50% the drain-induced barrier lowering, 34.67% in the subthreshold swing, 20% in the breakdown voltage, 10.18% in the cut-off frequency, 12% in the maximum oscillation frequency, and record high ION/IOFF of over 1012.9.

A physics-based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

2016 ◽  
Vol 214 (1) ◽  
pp. 1600504 ◽  
Author(s):  
Yunlong He ◽  
Shaopeng Zhai ◽  
Minhan Mi ◽  
Xiaowei Zhou ◽  
Xuefeng Zheng ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Gan Nanowire ◽  
Threshold Voltage Model
Sign in / Sign up

Export Citation Format

Share Document