Internal Field Emission on Germanium Surface at a. c. Field Effect

1963 ◽  
Vol 3 (8) ◽  
pp. 1318-1332 ◽  
Author(s):  
G. Dorda
Keyword(s):  
Field Emission ◽  
Field Effect ◽  
Internal Field ◽  
Germanium Surface

Internal field effect on vortex states in the layered organic superconductor λ -(BETS) 2Fe1−xGaxCl4 (x=0.37)

2017 ◽  
Vol 95 (16) ◽  
Author(s):  
S. Uji ◽  
T. Terashima ◽  
T. Konoike ◽  
T. Yamaguchi ◽  
S. Yasuzuka ◽  
...  
Keyword(s):  
Field Effect ◽  
Internal Field ◽  
Organic Superconductor ◽  
Vortex States

Oxidic Field Effect Structures with Memory

1995 ◽  
Vol 401 ◽  
Author(s):  
R.M. Wolf ◽  
J.F.M. Cillessen ◽  
J.B. Giesbers ◽  
E. Pastoor ◽  
G. Miiller ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Close Contact ◽  
Drain Current ◽  
Gate Oxide ◽  
Contact Layer ◽  
Internal Field ◽  
Depletion Width ◽  
Ferroelectric Layer ◽  
With Memory

Two types of switching memory devices have been made by integrating a ferroelectric layer in a device. A Schottky diode consisting of a ferroelectric semiconductor and a high work function metal was found to show a bistable I-V behaviour. Experimentally an On/Off current ratio of two orders of magnitude was found in a structure consisting of a semiconducting PbTiO3 layer with a gold top contact, grown on a La0.5Sr0.5CoO3 bottom contact layer. The ferroelectric polarization parallel or antiparallel to the internal field of the diode gives rise to a change in the Schottky barrier height and depletion width. This will, depending on the polarization direction of the ferroelectric layer, enhance or diminish the tunnel probability of charge carriers through the Schottky barrier and thereby increase or decrease the current through the device. In the Ferroelectric Field Effect Transistor an insulating ferroelectric gate oxide was brought in close contact to a gated n-type Sb-doped SnO2 semiconducting channel layer. A maximum On/Off Source-Drain current (IsD) ratio at zero gate voltage of 5.7 was found. Gate pulse measurements showed retention of IsD after polarisation reversal of the ferroelectric gate oxide in both polarization directions. After more than 104 switching cycles the device shows a gradual decrease in ISD both in the On and Off state.

Presence of Internal Field Emission Currents in GaAs Diodes

2012 ◽  
Author(s):  
Victor Rogelio Barrales-Guadarrama ◽  
Meliton Ezequiel Rodriguez-Rodriguez ◽  
Raymundo Barrales-Guadarrama ◽  
Ernesto Rodrigo Vazquez-Ceron
Keyword(s):  
Field Emission ◽  
Internal Field

Electroluminescence due to internal field emission in KI

1970 ◽  
Vol 31 (7) ◽  
pp. 1455-1460 ◽  
Author(s):  
C. Paracchini ◽  
G. Schianchi
Keyword(s):  
Field Emission ◽  
Internal Field

Internal Field Emission in Carbon Black-Loaded Natural Rubber Vulcanizates

1964 ◽  
Vol 37 (2) ◽  
pp. 348-354 ◽  
Author(s):  
L. K. H. van Beek ◽  
B. I. C. F. van Pul
Keyword(s):  
Carbon Black ◽  
Natural Rubber ◽  
Field Emission ◽  
Electron Micrographs ◽  
Internal Field ◽  
Emission Characteristics ◽  
Furnace Black ◽  
Three Samples ◽  
Insulating Gap ◽  
Natural Rubber Vulcanizates

Abstract The nonohmic behavior of carbon black-loaded natural rubber vulcanizates was studied. Three samples contained high-abrasion furnace black (HAF) in good, moderate, and poor dispersion. Another sample contained a good dispersion of medium thermal black (MT). The nonohmic behavior of the poor HAF dispersion and that of the MT dispersion could be interpreted as due to internal field emission across insulating gap widths of 2 and 2.5 µ. The existence of such gaps was confirmed by electron micrographs. No clear evidence of internal field emission could be obtained for the good and moderate HAF dispersions where, according to electron micrographs, the gaps are much narrower. There is some indication that the degree of dispersion can be correlated with field emission characteristics.

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