Extended iron phthalocyanine islands self-assembled on a Ge(001):H surface

Self-assembly of iron(II) phthalocyanine (FePc) molecules on a Ge(001):H surface results in monolayer islands extending over hundreds of nanometers and comprising upright-oriented entities. Scanning tunneling spectroscopy reveals a transport gap of 2.70 eV in agreement with other reports regarding isolated FePc molecules. Detailed analysis of single FePc molecules trapped at surface defects indicates that the molecules stay intact upon adsorption and can be manipulated away from surface defects onto a perfectly hydrogenated surface. This allows for their isolation from the germanium surface.

Особенности начальной стадии гетероэпитаксии слоев кремния на германии при их выращивании из гидридов кремния

Data on the dependence of the growth rate of Si layers deposited onto Ge(111) by the hydride method on their thickness at the initial heteroepitaxy stage are reported. The effect of a Ge substrate within ten grown silicon single layers on the Si-film growth rate is demonstrated. Based on the data obtained, the kinetic coefficients responsible for the rate of the main physicochemical processes related to the interaction of hydride molecular beams with the growth surface are calculated. An analysis of the capture probability and rates of pyrolysis of the adsorbed Si(Ge) hydride molecules on the pure Ge(Si) surfaces reveals the dependence of their behavior on the growing-layer thickness. Comparison of the results obtained during Si-layer growth on Ge shows that the pure germanium surface has higher adsorption and catalytic abilities with respect to silane molecules than the pure Si surface. The unstrained pure Si surface has higher adsorption and catalytic characteristics with respect to Ge-hydride molecules.

Исследование приповерхностного слоя германия, имплантированного ионами кобальта

The results of investigation of germanium surface nanostructured by ion implantation are presented. Single-crystal plates of germanium (c Ge) were irradiated by cobalt ions with an energy of 40 keV in the dose range (2 × 1016 - 8 × 1016) Co + / cm2. The method of scanning electron microscopy (SEM) has been used to study the evolution of the morphology of germanium surface with an increase of implantation dose. It has been found that with increasing dose of implantation, a layer of spherical formations with diameter of ~ 150 nm gradually forms on the surface of implanted germanium. The analysis of X-ray diffraction spectra indicated the appearance of nano-sized cobalt germanide (CoGe) particles in the implanted layer.