Elastic Interaction of Small Defects and Defect Clusters in Hexagonal Crystals

1974 ◽  
Vol 61 (2) ◽  
pp. 411-418 ◽  
Author(s):  
M. H. Yoo
Keyword(s):  
Elastic Interaction ◽  
Defect Clusters ◽  
Hexagonal Crystals

scholarly journals Фактор предпочтения базисной краевой дислокационной петли в цирконии. Численный анализ

2020 ◽  
Vol 62 (12) ◽  
pp. 2087
Author(s):  
А.В. Бабич ◽  
В.Ф. Клепиков ◽  
П.Н. Остапчук
Keyword(s):  
Elastic Anisotropy ◽  
Elastic Field ◽  
Elastic Interaction ◽  
Growth Theory ◽  
Hexagonal Crystal ◽  
Bias Factor ◽  
Area Of Influence ◽  
Hexagonal Crystals ◽  
Toroidal Geometry

Recent numerical calculations of the diffusion coefficients of radiation point defects in hexagonal crystals have made it clear that the main assumption of the radiation growth theory of zirconium (DAD - diffusional anisotropy difference) does not allow one to describe the radiation growth correctly. Thus, the elastic ideology (EID - elastic interaction difference), based on the concept of the flow bias factor, remains relevant. Therefore, the bias factor for the basic edge loop of zirconium in a toroidal reservoir was calculated numerically (using the finite difference method), taking into account the elastic anisotropy of the hexagonal crystal. The toroidal geometry of the reservoir makes it possible to calculate the flows for a loop of any size and without any correction of the elastic field in its area of influence. The dependences of the loop bias factor on its radius and nature are obtained for various sink densities. The essential role of the form of the boundary condition on the outer surface of the reservoir is shown. The prospects for further research in the construction of the theory of the radiation growth of zirconium based on the elastic ideology are discussed.

Elastic interaction of point defects in cubic and hexagonal crystals

2016 ◽  
Vol 58 (5) ◽  
pp. 971-980 ◽  
Author(s):  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
R. S. Telyatnik
Keyword(s):  
Point Defects ◽  
Elastic Interaction ◽  
Hexagonal Crystals

scholarly journals BIAS OF BASAL DISLOCATION LOOP IN ZIRCONIUM

2021 ◽  
pp. 29-34
Author(s):  
A.V. Babich ◽  
P.N. Ostapchuk
Keyword(s):  
Numerical Calculation ◽  
Dislocation Loop ◽  
Point Defects ◽  
Function Method ◽  
Elastic Field ◽  
Its Region ◽  
Elastic Interaction ◽  
Basal Dislocation ◽  
Hexagonal Crystals ◽  
Toroidal Geometry

An analytical expression for the elastic interaction energy of radiation point defects of the dipole type with the basal dislocation loop of the hcp metal is obtained using the Green's function method for hexagonal crystals in the Krener approach. It was used for numerical calculation of the bias for the basal dislocation loop of zirconium in a toroidal reservoir. The toroidal geometry of the reservoir allows one to perform the calculation for a loop of any size and without any correction of the elastic field in its region of influence. The dependencies of the loop bias on its radius and nature are obtained for various shapes of dipole defects.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Examination of Extra Electron Diffraction Spots Observed in Deuterium-Irradiated Silicon by Using Parallel Electron Beam Illumination

1990 ◽  
Vol 48 (2) ◽  
pp. 490-491
Author(s):  
Ryuichiro Oshima ◽  
Shoichiro Honda ◽  
Tetsuo Tanabe
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Single Crystal ◽  
Mixed Solution ◽  
Parallel Beam ◽  
Defect Clusters ◽  
Float Zone ◽  
Transmission Electron ◽  
Extra Electron ◽  
Diffraction Patterns

In order to examine the origin of extra diffraction spots and streaks observed in selected area diffraction patterns of deuterium irradiated silicon, systematic diffraction experiments have been carried out by using parallel beam illumination.Disc specimens 3mm in diameter and 0.5mm thick were prepared from a float zone silicon single crystal(B doped, 7kΩm), and were chemically thinned in a mixed solution of nitric acid and hydrogen fluoride to make a small hole at the center for transmission electron microscopy. The pre-thinned samples were irradiated with deuterium ions at temperatures between 300-673K at 20keV to a dose of 1022ions/m2, and induced lattice defects were examined under a JEOL 200CX electron microscope operated at 160kV.No indication of formation of amorphous was obtained in the present experiments. Figure 1 shows an example of defects induced by irradiation at 300K with a dose of 2xl021ions/m2. A large number of defect clusters are seen in the micrograph.

Tem analysis of multiple-energy arsenic implanted and Rta'd silicon

1987 ◽  
Vol 45 ◽  
pp. 246-247
Author(s):  
R.A. Herring
Keyword(s):  
Device Fabrication ◽  
High Concentration ◽  
Tem Analysis ◽  
Defect Clusters ◽  
High Fluences ◽  
Small Defect ◽  
Before And After ◽  
The Matrix ◽  
The Difference ◽  
Factor Type

Rapid thermal annealing (RTA) of ion-implanted Si is important for device fabrication. The defect structures of 2.5, 4.0, and 6.0 MeV As-implanted silicon irradiated to fluences of 2E14, 4E14, and 6E14, respectively, have been analyzed by electron diffraction both before and after RTA at 1100°C for 10 seconds. At such high fluences and energies the implanted As ions change the Si from crystalline to amorphous. Three distinct amorphous regions emerge due to the three implantation energies used (Fig. 1). The amorphous regions are separated from each other by crystalline Si (marked L1, L2, and L3 in Fig. 1) which contains a high concentration of small defect clusters. The small defect clusters were similar to what had been determined earlier as being amorphous zones since their contrast was principally of the structure-factor type that arises due to the difference in extinction distance between the matrix and damage regions.

Origin of the alternate bright/dark contrast in HREM images of hexagonal crystals, particularly 6H-SiC

1993 ◽  
Vol 51 ◽  
pp. 914-915
Author(s):  
J.S. Bow ◽  
R.W. Carpenter ◽  
M.J. Kim
Keyword(s):  
High Resolution ◽  
Incident Beam ◽  
Hexagonal Crystal ◽  
Detailed Explanation ◽  
Similar Character ◽  
High Resolution Images ◽  
The Difference ◽  
Zigzag Shape ◽  
Hexagonal Crystals ◽  
Dark Contrast

A prominent characteristic of high-resolution images of 6H-SiC viewed from [110] is a zigzag shape with a period of 6 layers as shown in Fig.1. Sometimes the contrast is same through the 6 layers of (0006) planes (Fig.1a), but in most cases it appears as in Fig.1b -- alternate bright/dark contrast among every three (0006) planes. Alternate bright/dark contrast is most common for the thicker specimens. The SAD patterns of these two types of image are almost same, and there is no indication that the difference results from compositional ordering. O’Keefe et al. concluded this type of alternate contrast was due to crystal tilt in thick parts of the specimen. However, no detailed explanation was given. Images of similar character from Ti3Al, which is also a hexagonal crystal, were reported by Howe et al. Howe attributed the bright/dark contrast among alternate (0002) Ti3Al planes to phase shifts produced by incident beam tilt.

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