In-Situ Characterization of II-VI Molecular Beam Epitaxy

1995 ◽  
Vol 187 (2) ◽  
pp. 309-313
Author(s):  
J. M. Gaines ◽  
C. A. Ponzoni
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Characterization

scholarly journals Molecular beam epitaxy preparation and in situ characterization of FeTe thin films

2020 ◽  
Vol 4 (2) ◽  
Author(s):  
V. M. Pereira ◽  
C. N. Wu ◽  
C. E. Liu ◽  
S.-C. Liao ◽  
C. F. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
In Situ Characterization

In situ characterization of a cold and short pulsed molecular beam by femtosecond ion imaging

2009 ◽  
Vol 11 (20) ◽  
pp. 3958 ◽  
Author(s):  
Daniel Irimia ◽  
Rob Kortekaas ◽  
Maurice H. M. Janssen
Keyword(s):  
Molecular Beam ◽  
Ion Imaging ◽  
In Situ Characterization

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

A compact molecular-beam epitaxy apparatus for in situ soft X-ray magnetic circular dichroism experiments

1998 ◽  
Vol 5 (3) ◽  
pp. 1038-1040
Author(s):  
Tsuneharu Koide ◽  
Tetsuo Shidara ◽  
Nobuo Nakajima ◽  
Hiroshi Miyauchi ◽  
Hirohito Fukutani
Keyword(s):  
Circular Dichroism ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Magnetic Circular Dichroism ◽  
Layer By Layer ◽  
X Ray ◽  
Optical Instruments ◽  
Circular Dichroïsm

An economical and easily movable molecular-beam epitaxy (MBE) apparatus which prepares magnetic ultrathin films and superlattices with atomically well controlled interfaces has been designed and constructed. Cleaning and characterization of substrates, sample deposition in a layer-by-layer fashion, and characterization of samples both during and after growth can be carried out in a single ultrahigh vacuum (UHV) chamber. This MBE apparatus is combined with UHV high-field magneto-optical instruments for in situ soft X-ray magnetic circular dichroism experiments on two-dimensional magnetic systems.

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