Temperature dependence of the quantum efficiency in green light emitting diode dies

2007 ◽  
Vol 4 (7) ◽  
pp. 2784-2787 ◽  
Author(s):  
Y. Li ◽  
W. Zhao ◽  
Y. Xia ◽  
M. Zhu ◽  
J. Senawiratne ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting

scholarly journals Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode

2018 ◽  
Vol 9 (1) ◽  
pp. 77 ◽  
Author(s):  
Muhammad Usman ◽  
Urooj Mushtaq ◽  
Dong-Guang Zheng ◽  
Dong-Pyo Han ◽  
Muhammad Rafiq ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Efficiency ◽  
Recombination Rate ◽  
Auger Recombination ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Light Emitting ◽  
Hole Confinement ◽  
Electromechanical Field

To improve the internal quantum efficiency of green light-emitting diodes, we present the numerical design and analysis of bandgap-engineered W-shaped quantum well. The numerical results suggest significant improvement in the internal quantum efficiency of the proposed W-LED. The improvement is associated with significantly improved hole confinement due to the localization of indium in the active region, leading to improved radiative recombination rate. In addition, the proposed device shows reduced defect-assisted Shockley-Read-Hall (SRH) recombination rate as well as Auger recombination rate. Moreover, the efficiency rolloff in the proposed device is associated with increased built-in electromechanical field.

scholarly journals Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

2019 ◽  
Vol 9 (3) ◽  
pp. 383
Author(s):  
Boyang Lu ◽  
Lai Wang ◽  
Zhibiao Hao ◽  
Yi Luo ◽  
Changzheng Sun ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Internal Quantum Efficiency ◽  
Green Light ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Integrated Intensity ◽  
Calculation Results

In this paper, the optical properties of GaN-based green light emitting diode (LED) are investigated and the internal quantum efficiency (IQE) values are measured by temperature dependent photoluminescence (TDPL) and power dependent photoluminescence (PDPL) methods. The "S-shaped” shift of peak wavelength measured at different temperature disappears gradually and the spectra broadening can be observed with increasing excitation power. The IQE calculation results of TDPL, which use the integrated intensity measured at low temperature as unity, can be modified by PDPL in order to acquire more accurate IQE values.

scholarly journals Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature

2006 ◽  
Vol 955 ◽  
Author(s):  
Yufeng Li ◽  
Wei Zhao ◽  
Yong Xia ◽  
Mingwei Zhu ◽  
Jayantha Senawiratne ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Efficiency ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Green Light ◽  
Secondary Emission ◽  
Multiple Quantum ◽  
Acceptor Pair ◽  
Light Emitting ◽  
Lower Temperature

ABSTRACTThe electroluminescence, photoluminescence and cathodoluminescence of GaInN/GaN multiple quantum well light emitting diode dies are analyzed at variable low temperature. Three dies of nominally identical structure but strongly different RT performance from 510 nm to 525 nm have been studied. The electroluminescence peak energy exhibits a blue shift from RT to 158 K followed by a red shift for lower temperature. In the same low-temperature range, a secondary emission peak appears near 390 nm (3.18 eV) that resembles a donor-acceptor pair transition from GaN. Depth profiling spectroscopy of this transition at 77 K reveals its location either in the unintentionally doped quantum barriers or within the n-GaN layer, rather than the commonly believed Mg doped p-type GaN layers. The external quantum efficiency of each die increases as the temperature is lowered. A maximum is reached for all near 158 K while for lower temperature as low as 7.7 K, the efficiency continuously drops. The pronounced efficiency maximum is tentatively assigned to a combination of temperature dependent mobility and shift of the actual pn-junction location.

A Cooper-Pair Light-Emitting Diode: Temperature Dependence of Both Quantum Efficiency and Radiative Recombination Lifetime

2010 ◽  
Vol 3 (5) ◽  
pp. 054001 ◽  
Author(s):  
Ikuo Suemune ◽  
Yujiro Hayashi ◽  
Shuhei Kuramitsu ◽  
Kazunori Tanaka ◽  
Tatsushi Akazaki ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Quantum Efficiency ◽  
Radiative Recombination ◽  
Cooper Pair ◽  
Light Emitting Diode ◽  
Recombination Lifetime ◽  
Light Emitting

n-type GaN surface etched green light-emitting diode to reduce non-radiative recombination centers

2021 ◽  
Vol 118 (2) ◽  
pp. 021102
Author(s):  
Dong-Pyo Han ◽  
Ryoto Fujiki ◽  
Ryo Takahashi ◽  
Yusuke Ueshima ◽  
Shintaro Ueda ◽  
...  
Keyword(s):  
Radiative Recombination ◽  
Light Emitting Diode ◽  
Green Light ◽  
Light Emitting ◽  
Recombination Centers

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

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