scholarly journals Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in-situ chemical etching

2009 ◽  
Vol 6 (4) ◽  
pp. 868-871 ◽  
Author(s):  
Yasuhiro Idutsu ◽  
Souta Miyamura ◽  
Ikuo Suemune
Keyword(s):  
Quantum Dots ◽  
Chemical Etching ◽  
Gaas Surface ◽  
Inas Quantum Dots ◽  
Luminescence Efficiency

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

2008 ◽  
Vol 93 (10) ◽  
pp. 101908 ◽  
Author(s):  
P. Atkinson ◽  
S. Kiravittaya ◽  
M. Benyoucef ◽  
A. Rastelli ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Controlled Growth ◽  
Patterned Substrates ◽  
Inas Quantum Dots

Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes

2002 ◽  
Vol 749 ◽  
Author(s):  
Michael Yakimov ◽  
Vadim Tokranov ◽  
Alex Katnelson ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Direct Evidence ◽  
Matrix Material ◽  
Single Layer ◽  
High Energy ◽  
Inas Quantum Dots ◽  
Auger Signal ◽  
The Matrix ◽  
Growth Evolution

ABSTRACTWe have studied the first phases of post-growth evolution of InAs quantum dots (QDs) using in-situ Auger electron spectroscopy in conjunction with Reflection High Energy Electron Diffraction (RHEED). Direct evidence for InAs intermixing with about 6ML (monolayers) of the matrix material is found from Auger signal behavior during MBE overgrowth of InAs nanostructures. Re-establishment of 2D growth mode by overgrowth with GaAs or AlAs was monitored in single-layer and multi-layer QD structures using RHEED. Decay process of InAs QDs on the surface is found to have activation energy of about 1.1 eV that corresponds to In intermixing with the matrix rather than evaporation from the surface.

Structural Origin of Enhanced Luminescence Efficiency of Antimony Irradiated InAs Quantum Dots

2011 ◽  
Vol 4 (11) ◽  
pp. 3776-3778
Author(s):  
Ana M. Beltran ◽  
Teresa Ben ◽  
David L. Sales ◽  
Ana M. Sanchez ◽  
Jose M. Ripalda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Inas Quantum Dots ◽  
Luminescence Efficiency ◽  
Enhanced Luminescence

Effect of InAs quantum dots on the Fermi level pinning of undoped-n+ type GaAs surface studied by contactless electroreflectance

2003 ◽  
Vol 93 (7) ◽  
pp. 4169-4172 ◽  
Author(s):  
Peng Jin ◽  
X. Q. Meng ◽  
Z. Y. Zhang ◽  
C. M. Li ◽  
B. Xu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fermi Level ◽  
Gaas Surface ◽  
Inas Quantum Dots ◽  
Fermi Level Pinning

scholarly journals In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

2007 ◽  
Vol 78 (7) ◽  
pp. 073908 ◽  
Author(s):  
Shunsuke Ohkouchi ◽  
Yusui Nakamura ◽  
Naoki Ikeda ◽  
Yoshimasa Sugimoto ◽  
Kiyoshi Asakawa
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Growth ◽  
Inas Quantum Dots ◽  
Molecular Beam Epitaxy System

Extremely low density InAs quantum dots realized in situ on (100) GaAs

2004 ◽  
Vol 15 (12) ◽  
pp. 1763-1766 ◽  
Author(s):  
Jie Sun ◽  
Peng Jin ◽  
Zhan-Guo Wang
Keyword(s):  
Quantum Dots ◽  
Low Density ◽  
Inas Quantum Dots
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