Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2445-2447 ◽  
Author(s):  
Casey Kirkpatrick ◽  
Bongmook Lee ◽  
Xiangyu Yang ◽  
Veena Misra
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