Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition
2011 ◽
Vol 8
(7-8)
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pp. 2445-2447
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2015 ◽
Vol 36
(5)
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pp. 442-444
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2013 ◽
Vol 34
(6)
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pp. 744-746
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