Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Atomic layer deposition of ZrO2as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon

Applied Physics Letters ◽

10.1063/1.4824445 ◽

2013 ◽

Vol 103 (14) ◽

pp. 142109 ◽

Cited By ~ 45

Author(s):

G. Ye ◽

H. Wang ◽

S. Arulkumaran ◽

G. I. Ng ◽

R. Hofstetter ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectrics ◽

Atomic Layer ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides

Applied Physics Express ◽

10.7567/apex.8.084101 ◽

2015 ◽

Vol 8 (8) ◽

pp. 084101 ◽

Cited By ~ 1

Author(s):

Po-Chun Yeh ◽

Yun-Wei Lin ◽

Yue-Lin Huang ◽

Jui-Hung Hung ◽

Bo-Ren Lin ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Layer Deposition ◽

Gate Recess

Enhancement mode AlGaN/GaN MOS high-electron-mobility transistors with ZrO2gate dielectric deposited by atomic layer deposition

Applied Physics Express ◽

10.7567/apex.9.071003 ◽

2016 ◽

Vol 9 (7) ◽

pp. 071003 ◽

Cited By ~ 15

Author(s):

Travis J. Anderson ◽

Virginia D. Wheeler ◽

David I. Shahin ◽

Marko J. Tadjer ◽

Andrew D. Koehler ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Enhancement Mode ◽

In situ plasma enhanced atomic layer deposition half cycle study of Al2O3 on AlGaN/GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.4929818 ◽

2015 ◽

Vol 107 (8) ◽

pp. 081608 ◽

Cited By ~ 12

Author(s):

Xiaoye Qin ◽

Robert M. Wallace

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

Half Cycle ◽

High Electron Mobility ◽

Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics

physica status solidi (c) ◽

10.1002/pssc.201001064 ◽

2011 ◽

Vol 8 (7-8) ◽

pp. 2445-2447 ◽

Cited By ~ 8

Author(s):

Casey Kirkpatrick ◽

Bongmook Lee ◽

Xiangyu Yang ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Performance Improvement ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Performance enhancement of GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation

2012 Lester Eastman Conference on High Performance Devices (LEC) ◽

10.1109/lec.2012.6411000 ◽

2012 ◽

Author(s):

Dong Xu ◽

Kanin Chu ◽

J. Diaz ◽

Wenhua Zhu ◽

R. Roy ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Performance Enhancement ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Nanoscale Research Letters ◽

10.1186/s11671-017-2082-0 ◽

2017 ◽

Vol 12 (1) ◽

Cited By ~ 8

Author(s):

An-Jye Tzou ◽

Kuo-Hsiung Chu ◽

I-Feng Lin ◽

Erik Østreng ◽

Yung-Sheng Fang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Surface Passivation ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers

IEEE Electron Device Letters ◽

10.1109/led.2015.2409264 ◽

2015 ◽

Vol 36 (5) ◽

pp. 442-444 ◽

Cited By ~ 19

Author(s):

Dong Xu ◽

K. K. Chu ◽

J. A. Diaz ◽

M. Ashman ◽

J. J. Komiak ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Power Amplifiers ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽

Band Power ◽

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

Applied Physics Letters ◽

10.1063/1.4861463 ◽

2014 ◽

Vol 104 (1) ◽

pp. 013506 ◽

Cited By ~ 28

Author(s):

D. Gregušová ◽

M. Jurkovič ◽

Š. Haščík ◽

M. Blaho ◽

A. Seifertová ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Threshold Voltage ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

Plasma Oxidation ◽

High Electron Mobility ◽

0.2-$\mu{\rm m}$ AlGaN/GaN High Electron-Mobility Transistors With Atomic Layer Deposition ${\rm Al}_{2}{\rm O}_{3}$ Passivation

IEEE Electron Device Letters ◽

10.1109/led.2013.2255257 ◽

2013 ◽

Vol 34 (6) ◽

pp. 744-746 ◽

Cited By ~ 24

Author(s):

Dong Xu ◽

Kanin Chu ◽

Jose Diaz ◽

Wenhua Zhu ◽

Richard Roy ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Atomic Layer ◽

High Electron ◽

High Electron Mobility ◽