0.1- $\mu \text{m}$ Atomic Layer Deposition Al2O3 Passivated InAlN/GaN High Electron-Mobility Transistors for E-Band Power Amplifiers
2015 ◽
Vol 36
(5)
◽
pp. 442-444
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2011 ◽
Vol 8
(7-8)
◽
pp. 2445-2447
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2013 ◽
Vol 34
(6)
◽
pp. 744-746
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