Pulsed modulation doping of Alx Ga1-x N (x>0.6) AlGaN epilayers for deep UV optoelectronic devices

2014 ◽  
Vol 11 (3-4) ◽  
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Iftikhar Ahmad ◽  
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scholarly journals Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

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Optoelectronic Devices ◽  
Wide Bandgap ◽  
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High Structural Perfection ◽  
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High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

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Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals
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