Pulsed modulation doping of Alx Ga1-x N (x>0.6) AlGaN epilayers for deep UV optoelectronic devices

2014 ◽  
Vol 11 (3-4) ◽  
pp. 408-411 ◽  
Author(s):  
Hung-Chi Chen ◽  
Iftikhar Ahmad ◽  
Bin Zhang ◽  
Antwon Coleman ◽  
Mahbuba Sultana ◽  
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Modulation Doping ◽  
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scholarly journals Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

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Vol 7 (21) ◽  
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Yusin Pak ◽  
Naresh Alaal ◽  
Mohamed N. Hedhili ◽  
Dhaifallah R. Almalawi ◽  
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Keyword(s):  
Quantum Dots ◽  
Manganese Oxide ◽  
Optoelectronic Devices ◽  
Wide Bandgap ◽  
Deep Uv ◽  
P Type ◽  
Uv Range

Growth and characterization of Mg-doped AlGaN–AlN short-period superlattices for deep-UV optoelectronic devices

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Vol 312 (6) ◽  
pp. 756-761 ◽  
Author(s):  
A.A. Allerman ◽  
M.H. Crawford ◽  
M.A. Miller ◽  
S.R. Lee
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Optoelectronic Devices ◽  
Short Period ◽  
Short Period Superlattices ◽  
Deep Uv ◽  
Mg Doped

Preparation of deep UV transparent AlN substrates with high structural perfection for optoelectronic devices

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2016 ◽  
Vol 18 (19) ◽  
pp. 3488-3497 ◽  
Author(s):  
C. Hartmann ◽  
J. Wollweber ◽  
S. Sintonen ◽  
A. Dittmar ◽  
L. Kirste ◽  
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Structural Perfection ◽  
High Structural Perfection ◽  
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Vol 140 (7) ◽  
pp. 152-157
Author(s):  
Hirofumi Chiba ◽  
Yukio Suzuki ◽  
Yoshiaki Yasuda ◽  
Mitsuyasu Kumagai ◽  
Takaaki Koyama ◽  
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Silicon Wafer ◽  
Packaging Technology ◽  
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Strain Engineering in 2D Materials: Towards Strain Tunable Optoelectronic Devices

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Author(s):  
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Patricia Gant ◽  
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High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

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Author(s):  
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Francesco Di Stasio ◽  
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Inigo Ramiro ◽  
Yu Bi ◽  
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High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals
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