scholarly journals Novel P‐Type Wide Bandgap Manganese Oxide Quantum Dots Operating at Deep UV Range for Optoelectronic Devices

2019 ◽  
Vol 7 (21) ◽  
pp. 1900801 ◽  
Author(s):  
Somak Mitra ◽  
Yusin Pak ◽  
Naresh Alaal ◽  
Mohamed N. Hedhili ◽  
Dhaifallah R. Almalawi ◽  
...  
RSC Advances ◽  
2015 ◽  
Vol 5 (61) ◽  
pp. 49301-49307 ◽  
Author(s):  
Ya-Hui Chuai ◽  
Hong-Zhi Shen ◽  
Ya-Dan Li ◽  
Bing Hu ◽  
Yu Zhang ◽  
...  

As an important wide bandgap p-type conductive delafossite material, CuScO2 (CSO) has been intensively investigated for its wide applications in multi-functional optoelectronic devices.


Author(s):  
Dmytro Bederak ◽  
Dmitry N. Dirin ◽  
Nataliia Sukharevska ◽  
Jamo Momand ◽  
Maksym V. Kovalenko ◽  
...  

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.


Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).


Author(s):  
Sudesh Yadav ◽  
Satya Ranjan Jena ◽  
Bhavya M.B. ◽  
Ali Altaee ◽  
Manav Saxena ◽  
...  

2021 ◽  
Vol 129 (5) ◽  
pp. 054301
Author(s):  
M. Hrytsaienko ◽  
M. Gallart ◽  
M. Ziegler ◽  
O. Crégut ◽  
S. Tamariz ◽  
...  

2021 ◽  
Vol 118 (11) ◽  
pp. 112102
Author(s):  
Wang Fu ◽  
Mingkai Li ◽  
Jiashuai Li ◽  
Guojia Fang ◽  
Pan Ye ◽  
...  

2001 ◽  
Vol 666 ◽  
Author(s):  
Kazushige Ueda ◽  
Shin-ichiro Inoue ◽  
Sakyo Hirose ◽  
Hiroshi Kawazoe ◽  
Hideo Hosono

ABSTRACTMaterials design for transparent p-type conducting oxides was extended to oxysulfide system. LaCuOS was selected as a candidate for a transparent p-type semiconductor. It was found that the electrical conductivity of LaCuOS was p-type and controllable from semiconducting to semi-metallic states by substituting Sr2+ for La3+. LaCuOS films showed high transparency in the visible region, and the bandgap estimated was approximately 3.1 eV. Moreover, it was revealed that LaCuOS showed sharp excitonic absorption and emission at the bandgap edge, which is advantageous for optical applications. A layered oxysulfide, LaCuOS, was proposed to be a promising material for optoelectronic devices.


2007 ◽  
Vol 18 (S1) ◽  
pp. 363-365 ◽  
Author(s):  
X. M. Wen ◽  
L. V. Dao ◽  
J. A. Davis ◽  
P. Hannaford ◽  
S. Mokkapati ◽  
...  
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