Transient Polarization Reversal using an Intense THz Pulse in Silicon‐Doped Lead Germanate

2020 ◽  
pp. 2000460
Author(s):  
Vladislav Bilyk ◽  
Elena Mishina ◽  
Natalia Sherstyuk ◽  
Alexander Bush ◽  
Andrey Ovchinnikov ◽  
...  
Keyword(s):  
Polarization Reversal ◽  
Lead Germanate ◽  
Silicon Doped

scholarly journals Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

2015 ◽  
Vol 99 ◽  
pp. 240-246 ◽  
Author(s):  
Dayu Zhou ◽  
Yan Guan ◽  
Melvin M. Vopson ◽  
Jin Xu ◽  
Hailong Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Hafnium Oxide ◽  
Ferroelectric Thin Films ◽  
Polarization Reversal ◽  
Temperature Scaling ◽  
Silicon Doped

Domain Nucleation During Polarization Reversal in Lead Germanate

1994 ◽  
Vol 33 (Part 1, No. 9B) ◽  
pp. 5536-5539 ◽  
Author(s):  
Alexei Gruverman ◽  
Nikolai Ponomarev ◽  
Koichiro Takahashi
Keyword(s):  
Polarization Reversal ◽  
Lead Germanate

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

scholarly journals Highly efficient THz four-wave mixing in doped silicon

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Nils Dessmann ◽  
Nguyen H. Le ◽  
Viktoria Eless ◽  
Steven Chick ◽  
Kamyar Saeedi ◽  
...  
Keyword(s):  
Four Wave Mixing ◽  
Wave Mixing ◽  
Optical Nonlinearities ◽  
Third Order ◽  
Picosecond Pulses ◽  
Light Pulses ◽  
A Value ◽  
Doped Silicon ◽  
Perturbative Regime ◽  
Silicon Doped

AbstractThird-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.

Interface coupling and charge doping in graphene on ferroelectric BiAlO3(0001) polar surfaces

2021 ◽  
Vol 23 (5) ◽  
pp. 3407-3416
Author(s):  
Jin Yuan ◽  
Jian-Qing Dai ◽  
Cheng Ke ◽  
Zi-Cheng Wei
Keyword(s):  
Dft Calculations ◽  
Hybrid System ◽  
First Principles ◽  
Doping Effect ◽  
Coupling Mechanism ◽  
Polarization Reversal ◽  
Interface Coupling ◽  
Polar Surfaces ◽  
Charge Doping

The interface coupling mechanism, charge doping effect, and effect of polarization reversal in the graphene/BiAlO3(0001) hybrid system are explored by first-principles DFT calculations.

Silicon doped carbon/Cu joints based on amorphous alloy brazing for first wall application

2007 ◽  
Vol 82 (1) ◽  
pp. 35-40 ◽  
Author(s):  
Zhang-Jian Zhou ◽  
Zhi-Hong Zhong ◽  
Chang-Chun Ge
Keyword(s):  
Amorphous Alloy ◽  
First Wall ◽  
Silicon Doped

A study of vibrations of boron and phosphorus in silicon by infra-red absorption

1965 ◽  
Vol 287 (1408) ◽  
pp. 64-88 ◽  
Keyword(s):  
Second Harmonic ◽  
Force Constants ◽  
Published Data ◽  
Free Carrier Absorption ◽  
Local Modes ◽  
Pure Silicon ◽  
Infra Red ◽  
Carrier Absorption ◽  
Experimental Problem ◽  
Silicon Doped

The infra-red absorption spectrum of silicon doped with high densities of boron and phosphorus has been measured from 1 to 60 μm and at temperatures between 5 and 290 °K in order to observe the local and band mode vibrational absorption activated by these impurities. The major experimental problem, that of achieving a high degree of electrical compensation to eliminate free carrier absorption, was solved by using fast electron bombardment to introduce a controllable number of trapping centres. A series of experiments was conducted to eliminate the effects of these centres from the spectrum of the chemical impurities. The characteristic spectra of the substitutional boron and phosphorus have been analysed in detail in terms of the theory of Dawber & Elliott. For local modes activated by boron isotopes close agreement with theory has been found in number of lines, strength and frequency. From the latter it is estimated that the local force constants are weakened by less than 10 % on substituting boron for silicon in the lattice. Second harmonic lines are observed at a frequency 0.25 % less than twice that of the fundamentals. The band modes exhibit a striking in-band resonance at 0.0546 eV which was not theoretically predicted. This is attributed to phosphorus and analysis shows that the theory can give such a resonance but not with parameters associated with substitutional phosphorus and unchanged force constants. Most of the remaining features in the band modes can be interpreted satisfactorily in terms of substitutional boron but this requires some modification to published data on the density of states for pure silicon. Critical points for TO( L ), TO( X ) and LA( L ) phonons are clearly identified in the spectra.

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