scholarly journals Bulk Rashba spin splitting and Dirac surface state in p ‐type (Bi 0.96 Sb 0.1 ) 2 Se 3 single crystal

Author(s):  
P. K. Ghose ◽  
S. Bandyopadhyay ◽  
T. K. Dalui ◽  
J.-C. Tseng ◽  
J. K. Dey ◽  
...  
2010 ◽  
Vol 1 (1) ◽  
Author(s):  
Koichiro Yaji ◽  
Yoshiyuki Ohtsubo ◽  
Shinichiro Hatta ◽  
Hiroshi Okuyama ◽  
Koji Miyamoto ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Yan Li ◽  
Yang Li ◽  
Peng Li ◽  
Bin Fang ◽  
Xu Yang ◽  
...  

AbstractNonmagnetic Rashba systems with broken inversion symmetry are expected to exhibit nonreciprocal charge transport, a new paradigm of unidirectional magnetoresistance in the absence of ferromagnetic layer. So far, most work on nonreciprocal transport has been solely limited to cryogenic temperatures, which is a major obstacle for exploiting the room-temperature two-terminal devices based on such a nonreciprocal response. Here, we report a nonreciprocal charge transport behavior up to room temperature in semiconductor α-GeTe with coexisting the surface and bulk Rashba states. The combination of the band structure measurements and theoretical calculations strongly suggest that the nonreciprocal response is ascribed to the giant bulk Rashba spin splitting rather than the surface Rashba states. Remarkably, we find that the magnitude of the nonreciprocal response shows an unexpected non-monotonical dependence on temperature. The extended theoretical model based on the second-order spin–orbit coupled magnetotransport enables us to establish the correlation between the nonlinear magnetoresistance and the spin textures in the Rashba system. Our findings offer significant fundamental insight into the physics underlying the nonreciprocity and may pave a route for future rectification devices.


2016 ◽  
Vol 4 (37) ◽  
pp. 8750-8757 ◽  
Author(s):  
Yi-zhen Jia ◽  
Wei-xiao Ji ◽  
Chang-wen Zhang ◽  
Ping Li ◽  
Miao-juan Ren ◽  
...  

Band topology and Rashba spin splitting (RSS) are two extensively explored yet exotic properties in condensed matter physics.


RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44088-44095
Author(s):  
Ning Wu ◽  
Xue-Jing Zhang ◽  
Bang-Gui Liu

Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films.


2021 ◽  
Vol 104 (8) ◽  
Author(s):  
Lei Sun ◽  
Xikui Ma ◽  
Jian Liu ◽  
Mingwen Zhao

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