Paper No S12.4: Effect of Plasma Power of Plasma Enhanced Atomic Layer Deposition Process for Gate Insulator Deposition in Top-Gate Thin-Film Transistors
2015 ◽
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2019 ◽
Vol 37
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pp. 060910
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2007 ◽
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2019 ◽
Vol 474
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2012 ◽
Vol 18
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