The influence of atomic layer deposition process temperature on ZnO thin film structure

2019 ◽  
Vol 474 ◽  
pp. 177-186 ◽  
Author(s):  
P. Boryło ◽  
K. Matus ◽  
K. Lukaszkowicz ◽  
J. Kubacki ◽  
K. Balin ◽  
...  
RSC Advances ◽  
2018 ◽  
Vol 8 (44) ◽  
pp. 25014-25020 ◽  
Author(s):  
So-Jung Yoon ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Woong-Chul Shin ◽  
Sung-Min Yoon

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).


1996 ◽  
Vol 169 (3) ◽  
pp. 496-502 ◽  
Author(s):  
Jaan Aarik ◽  
Aleks Aidla ◽  
Väino Sammelselg ◽  
Hele Siimon ◽  
Teet Uustare

ACS Omega ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 14567-14574 ◽  
Author(s):  
Mantu K. Hudait ◽  
Michael B. Clavel ◽  
Jheng-Sin Liu ◽  
Shuvodip Bhattacharya

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