8.2: High Performance Oxide Thin Film Transistors Fabricated by Atomic Layer Deposition Process

2021 ◽  
Vol 52 (S2) ◽  
pp. 141-141
Author(s):  
Dedong Han ◽  
Huijin Li ◽  
Junchen Dong ◽  
Xiaobin Zhou ◽  
Qi Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
High Performance ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition

scholarly journals Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (44) ◽  
pp. 25014-25020 ◽  
Author(s):  
So-Jung Yoon ◽  
Nak-Jin Seong ◽  
Kyujeong Choi ◽  
Woong-Chul Shin ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Temperature Stress ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Thin Film ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
Bias Temperature Stress

Bias temperature stress stabilities of thin-film transistors (TFTs) using In–Ga–Zn–O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm).

High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

2019 ◽  
Vol 11 (16) ◽  
pp. 14892-14901 ◽  
Author(s):  
In-Hwan Baek ◽  
Jung Joon Pyeon ◽  
Seong Ho Han ◽  
Ga-Yeon Lee ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films
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