HfO2 gate insulator formed by atomic layer deposition for thin-film-transistors

2007 ◽  
Vol 515 (12) ◽  
pp. 5109-5112 ◽  
Author(s):  
S.-W. Jeong ◽  
H.J. Lee ◽  
K.S. Kim ◽  
M.T. You ◽  
Y. Roh ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition

Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

2009 ◽  
Vol 94 (14) ◽  
pp. 142107 ◽  
Author(s):  
J. B. Kim ◽  
C. Fuentes-Hernandez ◽  
W. J. Potscavage ◽  
X.-H. Zhang ◽  
B. Kippelen
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Layer Deposition

Characteristics of SiO2 Film Grown by Atomic Layer Deposition as the Gate Insulator of Low-Temperature Polysilicon Thin-Film Transistors

2007 ◽  
Vol 124-126 ◽  
pp. 247-250 ◽  
Author(s):  
Won Jun Lee ◽  
Min Ho Chun ◽  
Kwang Su Cheong ◽  
Kwang Chol Park ◽  
Chong Ook Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Sio2 Films ◽  
Layer Deposition ◽  
Better Than

SiO2 films were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as a gate insulator of low-temperature polysilicon thin-film transistors. ALD SiO2 films were deposited at 350–400 oC using alternating exposures of SiH2Cl2 and O3/O2, and the characteristics of the deposited films were improved with increasing deposition temperature. The ALD films deposited at 400 oC exhibited integrity, surface roughness and leakage current better than those of the conventional plasma-enhanced chemical vapor deposition (PECVD) films.

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