Rapid surface functionalization of poly(ethersulphone) foils using a highly reactive oxygen-plasma treatment

2007 ◽  
Vol 39 (6) ◽  
pp. 476-481 ◽  
Author(s):  
T. Vrlinič ◽  
A. Vesel ◽  
U. Cvelbar ◽  
M. Krajnc ◽  
M. Mozetič
2021 ◽  
Vol 121 ◽  
pp. 111848
Author(s):  
Karol Kyzioł ◽  
Julia Rajczyk ◽  
Karol Wolski ◽  
Agnieszka Kyzioł ◽  
Bartosz Handke ◽  
...  

2011 ◽  
Vol 58 (3) ◽  
pp. 147-161 ◽  
Author(s):  
Atefeh Solouk ◽  
Brian G. Cousins ◽  
Hamid Mirzadeh ◽  
Mehran Solati-Hashtjin ◽  
Siamak Najarian ◽  
...  

2021 ◽  
Vol 347 ◽  
pp. 130651 ◽  
Author(s):  
Jian F.S. Pereira ◽  
Raquel G. Rocha ◽  
Silvia V.F. Castro ◽  
Afonso F. João ◽  
Pedro H.S. Borges ◽  
...  

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..


2019 ◽  
Vol 463 ◽  
pp. 91-95 ◽  
Author(s):  
Vallivedu Janardhanam ◽  
Hyung-Joong Yun ◽  
Inapagundla Jyothi ◽  
Shim-Hoon Yuk ◽  
Sung-Nam Lee ◽  
...  

2017 ◽  
Vol 53 (89) ◽  
pp. 12100-12103 ◽  
Author(s):  
Jaeyeon Bae ◽  
Jin-Woo Jung ◽  
Hyo Yul Park ◽  
Chang-Hee Cho ◽  
Jinhee Park

HKUST-1, a representative MOF, can be both regenerated and protected against moisture deactivation by treatment with O2 plasma.


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