Thermally Stable Quantum Rods, Covering Full Visible Range for Display and Lighting Application

Small ◽  
2020 ◽  
pp. 2004487
Author(s):  
Maksym F. Prodanov ◽  
Swadesh K. Gupta ◽  
Chengbin Kang ◽  
Maksym Y. Diakov ◽  
Valerii V. Vashchenko ◽  
...  
Small ◽  
2021 ◽  
Vol 17 (3) ◽  
pp. 2170011
Author(s):  
Maksym F. Prodanov ◽  
Swadesh K. Gupta ◽  
Chengbin Kang ◽  
Maksym Y. Diakov ◽  
Valerii V. Vashchenko ◽  
...  

2019 ◽  
Vol 216 ◽  
pp. 116714 ◽  
Author(s):  
A.P. Shablinskii ◽  
I.E. Kolesnikov ◽  
R.S. Bubnova ◽  
A.V. Povolotskiy ◽  
E. Lähderanta ◽  
...  

2020 ◽  
Vol 1 (5) ◽  
pp. 1427-1438
Author(s):  
Julija Grigorjevaite ◽  
Egle Ezerskyte ◽  
Juraj Páterek ◽  
Sebastien Saitzek ◽  
Akvilė Zabiliūtė-Karaliūnė ◽  
...  

Novel and highly thermally stable K2Bi(PO4)(MoO4):Sm3+ phosphors were prepared and used to produce pcLEDs for horticulture and general lighting application.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Jaewan Ko ◽  
Byeong Guk Jeong ◽  
Jun Hyuk Chang ◽  
Joonyoung F. Joung ◽  
Suk-Young Yoon ◽  
...  

MRS Advances ◽  
2020 ◽  
Vol 5 (43) ◽  
pp. 2231-2239
Author(s):  
Eduardo A. Chaparro Barriera ◽  
Sonia J. Bailón-Ruiz

AbstractQuantum Dots (QDs) like Cadmium Sulphide have exciting applications, consequent to their size-dependent optical properties. This compound is used as a pigment in papers, paint, and it can also be found in solar cells. Due to the high use of nanoparticles in society, there is a significant concern in the scientific community about the potential toxicity of these nanomaterials in aquatic environments. According to this main problem, we have a theoretical assumption that Cadmium Sulphide (CdS) particles at nanoscale are more toxic than those in macroscale (bulk), and a higher concentration means higher toxicity. To verify its toxicity in the aquatic environment, first, we need to make sure the nanoparticles are soluble in water. Based in the mentioned before, the objectives of this research were: (i) synthesize Cadmium Sulphide QDs in aqueous phase in presence of biocompatible molecules like L-Glutathione and N-Acetyl-L-cysteine, (ii) characterize the quantum dots optically, structurally and morphologically and; (iii) evaluate the toxicity of Cadmium Sulphide in biological systems. CdS, L-Glutathione-covered CdS and N-Acetyl-L-Cysteine-covered CdS evidenced shoulder peaks at 473 nm (2.40 eV), 450 nm (2.62 eV) and, 381 (3.03 eV) nm, respectively. A broad and high emission peak centered at 545 nm was observed for CdS Nps covered with N-acetyl-L cysteine; whereas as QDs without cover and those covered with L-glutathione showed weak peaks in the visible range (470 nm-650 nm). The presence of L-Glutathione or N-Acetyl-L-cysteine on the quantum dots surface was verified by Infrared Spectroscopy. Energy Dispersive X-Ray Spectroscopy (EDX) assays evidenced the chemical composition of produced nanostructures having 57.91% of S and 42.09% of Cd. The morphology and the size were carried out by High-Resolution Transmission Electron Microscopy (HR-TEM). In this way, nanoparticles were spherical and with a size of ~3 nm. Toxicity results evidence that nanoparticles covered with N-Acetyl-L-Cysteine had a negative interaction in marine organisms at concentrations higher than 700 ppm, after 24 or 48 hours of contact. Also, CdS bulk showed absence of toxicity to marine crustaceans.


Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.


2019 ◽  
pp. 71-77
Author(s):  
Vladimir V. Vorozhikhin ◽  
Eugenia L. Moreva ◽  
Vladimir G. Starovoytov ◽  
Igor G. Tyutyunnik

The purpose of this paper is an investigation of LEDs illumination experience at US-based aerodromes with an assessment of its feasibility and its necessity in Russia. The following methods were used: the analysis of aerodrome lighting requirements; the review and the analysis of development features in aerodrome LEDs illumination; the experience analysis of LEDs illumination of US-based aerodromes; the deductive analysis and the assessment synthesis of feasibility and necessity of US experience in LEDs illumination at Russian-based aerodromes. The following results were achieved: – The analysis of issues and opportunities was conducted for development of LEDs illumination at US-based aerodromes and of American experts’ recommendations for its use; – The cases were taken for use and assessment of development in LEDs illumination at US-based aerodromes; – The review and the analysis were conducted in relation to a developing market of LEDs illumination at Russian-based aerodromes. The main conclusion is that the US experience will improve quality and reliability of service provided in air transportation, comfort, and safety of Russian flights, as well as competitiveness of Russian- based airports and airlines (indirectly).


1998 ◽  
Vol 512 ◽  
Author(s):  
C. Hecht ◽  
R. Kummer ◽  
A. Winnacker

ABSTRACTIn the context of spectral-hole burning experiments in 4H- and 6H-SiC doped with vanadium the energy positions of the V4+/5+ level in both polytypes were determined in order to resolve discrepancies in literature. From these numbers the band offset of 6H/4H-SiC is calculated by using the Langer-Heinrich rule, and found to be of staggered type II. Furthermore the experiments show that thermally stable electronic traps exist in both polytypes at room temperature and considerably above, which may result in longtime transient shifts of electronic properties.


2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.


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