The Local Characterization of Individual Phase Mechanical Properties Using Nano-Indentation and In Situ Scanning Probe Microscopy in an Advanced High Strength Steel

2016 ◽  
Vol 88 (1) ◽  
pp. 1600274 ◽  
Author(s):  
Mahdi Karam-Abian ◽  
Abbas Zarei-Hanzaki ◽  
Hamid Reza Abedi
Keyword(s):  
Mechanical Properties ◽  
Scanning Probe Microscopy ◽  
High Strength Steel ◽  
High Strength ◽  
Scanning Probe ◽  
Advanced High Strength Steel ◽  
Nano Indentation ◽  
Local Characterization

Formability Characterization of 3rd Generation Advanced High-Strength Steel and Application to Forming a B-Pillar

2021 ◽  
Author(s):  
Jon Edward Gutierrez ◽  
Jacqueline Noder ◽  
Neil Paker ◽  
Jamie Bowman ◽  
Amir Zhumagulov ◽  
...  
Keyword(s):  
High Strength Steel ◽  
High Strength ◽  
Advanced High Strength Steel

Enhancing mechanical properties of medium Mn advanced high-strength steel by inter-critical annealing: elimination of austenizing and quenching steps

2019 ◽  
Vol 47 (10) ◽  
pp. 1148-1160
Author(s):  
Mohammad Zabihi-Gargari ◽  
Hamid Reza Shahverdi ◽  
Mohammad Emami ◽  
Mohsen Askari-Paykani
Keyword(s):  
Mechanical Properties ◽  
High Strength Steel ◽  
High Strength ◽  
Advanced High Strength Steel ◽  
Critical Annealing

Growth and characterization of Ge nanostructures on Si(111)

2001 ◽  
Vol 696 ◽  
Author(s):  
F. Rosei ◽  
N. Motta ◽  
A. Sgarlata ◽  
A. Balzarotti
Keyword(s):  
Scanning Probe Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Misfit Strain ◽  
Contact Angles ◽  
Scanning Probe ◽  
Wetting Layer ◽  
Reconstructed Surfaces

AbstractScanning Probe Microscopy (SPM) in situ is used to study the evolution of Ge islands grown by Physical Vapor Deposition on Si(111) 7×7 reconstructed surfaces. Large 3D islands form on the Wetting Layer (WL), with average lateral dimension in the range 200 - 500 nm. The statistical distribution of the island shapes has been analyzed, showing that three types of shapes coexist under certain conditions: strained, partially relaxed and ripened (atoll-like) islands. We measured the contact angles of the island facets, and observed the depletion of the substrate around the ripened islands. These features are attributed to the misfit strain, which is partially relieved by interdiffusion of Si into the Ge layers.

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