Role of sputtering power on the microstructural and electro-optical properties of ITO thin films deposited using DC sputtering technique

2017 ◽  
Vol 13 (1) ◽  
pp. 27-31 ◽  
Author(s):  
A. Kosarian ◽  
M. Shakiba ◽  
E. Farshidi

2014 ◽  
Vol 103 ◽  
pp. 227-233 ◽  
Author(s):  
Ateyyah M. Al-Baradi ◽  
M.M. El-Nahass ◽  
M.M. Abd El-Raheem ◽  
A.A. Atta ◽  
A.M. Hassanien


2014 ◽  
Author(s):  
Aijo John K ◽  
Vineetha V. Kumar ◽  
Deepak M ◽  
Manju T


2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Chuan Lung Chuang ◽  
Ming Wei Chang ◽  
Nien Po Chen ◽  
Chung Chiang Pan ◽  
Chung Ping Liu

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.





2011 ◽  
Vol 25 (20) ◽  
pp. 2741-2749 ◽  
Author(s):  
J. C. ZHOU ◽  
L. LI ◽  
L. Y. RONG ◽  
B. X. ZHAO ◽  
Y. M. CHEN ◽  
...  

High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO thin film is improved and all films show higher c-axis orientation with increasing sputtering power from 50 to 125 W. The average transparency of ZnO thin films is higher than 90% in the range of 400–900 nm between the sputtering power of 50–100 W. After the rapid thermal annealing at 550°C for 300 s under N2 ambient, the minimum resistivity reach to 10-2Ω⋅ cm .



2019 ◽  
Vol 35 (37) ◽  
pp. 1-10 ◽  
Author(s):  
Thaiyan Mahalingam ◽  
Vickraman Dhanasekaran ◽  
Ganesan Ravi ◽  
Rathinam Chandramohan ◽  
Adaikalam Kathalingam ◽  
...  


2020 ◽  
Vol 108 ◽  
pp. 110457 ◽  
Author(s):  
Zohra Nazir Kayani ◽  
Madia Sahar ◽  
Saira Riaz ◽  
Shahzad Naseem ◽  
Zeb Saddiqe




2018 ◽  
Author(s):  
Deepannita Chakraborty ◽  
S. Kaleemulla ◽  
N. Madhusudhana Rao ◽  
K. Subbaravamma ◽  
G. Venugopal Rao


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