Wide Band Conversion for Software Radio

Abstract. In modern communication, sensor and signal processing systems digitisation methods are gaining importance. They allow for building software configurable systems and provide better stability and reproducibility. Moreover digital front-ends cover a wider range of applications and have better performance compared with analog ones. The quest for new architectures in radio frequency front-ends is a clear consequence of the ever increasing number of different standards and the resulting task to provide a platform which covers as many standards as possible. At microwave frequencies, in particular at frequencies beyond 10 GHz, no direct sampling receivers are available yet. A look at the roadmap of the development of commercial analog-to-digital-converters (ADC) shows clearly, that they can neither be expected in near future. We present a novel architecture, which is capable of direct sampling of band-limited signals at frequencies beyond 10 GHz by means of an over-sampling technique. The wellknown Nyquist criterion states that wide-band digitisation of an RF-signal with a maximum frequency ƒ requires a minimum sampling rate of 2 · ƒ . But for a band-limited signal of bandwidth B the demands for the minimum sampling rate of the ADC relax to the value 2 · B. Employing a noise-forming sigma-delta ADC architecture even with a 1-bit-ADC a signal-to-noise ratio sufficient for many applications can be achieved. The key component of this architecture is the sample-and-hold switch. The required bandwidth of this switch must be well above 2 · ƒ . We designed, fabricated and characterized a preliminary demonstrator for the ISM-band at 2.4 GHz employing silicon Schottky diodes as a switch and SiGe-based MMICs as impedance transformers and comparators. Simulated and measured results will be presented.

Download Full-text

A novel wide-band direct conversion software radio platform

2001 IEEE Third Workshop on Signal Processing Advances in Wireless Communications (SPAWC'01). Workshop Proceedings (Cat. No.01EX471) ◽

10.1109/spawc.2001.923918 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Laddomada ◽

M. Mondin ◽

F. Daneshgaran ◽

R.M. Hickling

Keyword(s):

Software Radio ◽

Wide Band ◽

Direct Conversion

Download Full-text

Seven-colour photometry at the Geneva Observatory

Symposium - International Astronomical Union ◽

10.1017/s0074180900053535 ◽

1966 ◽

Vol 24 ◽

pp. 262-266 ◽

Cited By ~ 1

Author(s):

M. Golay

Keyword(s):

Wide Band ◽

Electric System ◽

Band Type

During the last 5 years, we have developed a seven-colour photometry at the Geneva Observatory. Our multicolour photo-electric system is of a wide-band type; the bandwidth being about 500Å for four filters. The three others are similar to theUBVsystem. In Table 1 we give the filter combinations used in our photometry (1).

Download Full-text

TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Download Full-text

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100154937 ◽

1989 ◽

Vol 47 ◽

pp. 592-593

Author(s):

J.B. Posthill ◽

R.P. Burns ◽

R.A. Rudder ◽

Y.H. Lee ◽

R.J. Markunas ◽

...

Keyword(s):

Thin Films ◽

Wide Band ◽

Deposition Process ◽

Heteroepitaxial Growth ◽

Electron Microscopic ◽

Wide Band Gap ◽

Lattice Matching ◽

Different Types ◽

Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Download Full-text