gallium phosphide (GaP), ESR and ENDOR data for shallow impurities

2005 ◽  
pp. 1-2
Author(s):  
Keyword(s):  
Gallium Phosphide ◽  
Shallow Impurities ◽  
Endor Data

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

KINETICS OF FIELD EVAPORATION OF GALLIUM PHOSPHIDE IN THE PRESENCE OF HYDROGEN

1989 ◽  
Vol 50 (C8) ◽  
pp. C8-141-C8-146
Author(s):  
A. GAUSSMANN ◽  
W. DRACHSEL ◽  
J. H. BLOCK
Keyword(s):  
Gallium Phosphide ◽  
Field Evaporation ◽  
Kinetics Of

Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.

1997 ◽  
Vol 2 ◽  
Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Layer Thickness ◽  
Buffer Layers ◽  
Rate Equations ◽  
Time Resolved ◽  
Versus Layer ◽  
Level Model ◽  
Shallow Impurities ◽  
Aln Buffer ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.

Visible Laser Probing (VLP) with GaP Solid Immersion Lens Demonstrating 110 nm Resolution in Common Laser Probing Applications

2016 ◽  
Author(s):  
Travis Eiles ◽  
Patrick Pardy
Keyword(s):  
Gallium Phosphide ◽  
Fault Isolation ◽  
Solid Immersion Lens ◽  
Laser Probing ◽  
Isolation Methods ◽  
Visible Laser ◽  
High Level ◽  
Industry Needs ◽  
Diameter Reduction ◽  
Better Than

Abstract This paper demonstrates a breakthrough method of visible laser probing (VLP), including an optimized 577 nm laser microscope, visible-sensitive detector, and an ultimate-resolution gallium phosphide-based solid immersion lens on the 10 nm node, showing a 110 nm resolution. This is 2x better than what is achieved with the standard suite of probing systems using typical infrared (IR) wavelengths today. Since VLP provides a spot diameter reduction of 0.5x over IR methods, it is reasonable, based simply on geometry, to project that VLP using the 577 nm laser will meet the industry needs for laser probing for both the 10 nm and 7 nm process nodes. Based on its high level of optimization, including high resolution and specialized solid immersion lens, it is highly likely that this VLP technology will be one of the last optically-based fault isolation methods successfully used.

Polarization of the second order Raman spectrum of gallium phosphide

1966 ◽  
Vol 20 (6) ◽  
pp. 610-612 ◽  
Author(s):  
P.G. Marlow ◽  
J.P. Russell ◽  
C.T. Sennett
Keyword(s):  
Raman Spectrum ◽  
Gallium Phosphide ◽  
Second Order

Thermoelectric n‐p Tester Using ac Bias for Gallium Arsenide and Gallium Phosphide

1971 ◽  
Vol 42 (1) ◽  
pp. 152-154 ◽  
Author(s):  
K. B. Wolfstirn ◽  
M. W. Focht
Keyword(s):  
Gallium Arsenide ◽  
Gallium Phosphide

Reply to "Electronic structure of oxygen in gallium phosphide"

1983 ◽  
Vol 28 (10) ◽  
pp. 6107-6109 ◽  
Author(s):  
T. N. Morgan
Keyword(s):  
Electronic Structure ◽  
Gallium Phosphide
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