Optical Measurements Using Light-Emitting Diodes

2004 ◽  
pp. 127-142 ◽  
Author(s):  
A. Žukauskas ◽  
M. S. Shur ◽  
R. Gaska
Keyword(s):  
Light Emitting Diodes ◽  
Optical Measurements ◽  
Light Emitting

Application of the light emitting diodes (LEDs) in optical measurements

2003 ◽  
Author(s):  
Vladimir E. Sabinin ◽  
Sergey K. Savelyev ◽  
Sergey V. Solk
Keyword(s):  
Light Emitting Diodes ◽  
Optical Measurements ◽  
Light Emitting

Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

2004 ◽  
Vol 831 ◽  
Author(s):  
R. J. Kaplar ◽  
S. R. Kurtz ◽  
D. D. Koleske ◽  
A. A. Allerman ◽  
A. J. Fischer ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Minority Carrier ◽  
Hole Transport ◽  
Optical Measurements ◽  
Hole Density ◽  
Transport Parameters ◽  
Two Phase ◽  
Time Resolved ◽  
Light Emitting ◽  
Order Of Magnitude

ABSTRACTForward-to-reverse bias step-recovery measurements were performed on In.07Ga.93N/GaN and Al.36Ga.64N/Al.46Ga.54N quantum-well (QW) light-emitting diodes grown on sapphire. With the QW sampling the minority-carrier hole density at a single position, distinctive two-phase optical decay curves were observed. Using diffusion equation solutions to self-consistently model both the electrical and optical responses, hole transport parameters τp = 758 ± 44 ns, Lp = 588 ± 45 nm, and μp = 0.18 ± 0.02 cm2/Vs were obtained for GaN. The mobility was thermally activated with an activation energy of 52 meV, suggesting trap-modulated transport. Optical measurements of sub-bandgap peaks exhibited slow responses approaching the bulk lifetime. For Al.46Ga.54N, a longer lifetime of τp = 3.0 μs was observed, and the diffusion length was shorter, Lp ≈ 280 nm. Mobility was an order of magnitude smaller than in GaN, μp ≈ 10−2 cm2/Vs, and was insensitive to temperature, suggesting hole transport through a network of defects.

scholarly journals Mean Differential Continuous Pulse Method for Accurate Optical Measurements of Light-Emitting Diodes and Laser Diodes

2021 ◽  
Vol 126 ◽  
Author(s):  
Yuqin Zong ◽  
Jeff Hulett ◽  
Naomasa Koide ◽  
Yoshiki Yamaji ◽  
C. Cameron Miller
Keyword(s):  
Light Emitting Diodes ◽  
Laser Diodes ◽  
Pulse Method ◽  
Optical Measurements ◽  
Error Sources ◽  
Light Emitting ◽  
Order Of Magnitude ◽  
Uv Leds ◽  
Ultraviolet Light Emitting Diodes ◽  
Continuous Pulse

Limited sources exist for the application of germicidal ultraviolet (GUV) radiation. Ultraviolet light-emitting diodes (UV-LEDs) have significantly improved in efficiency and are becoming another viable source for GUV. We have developed a mean differential continuous pulse method (M-DCP method) for optical measurements of light-emitting diodes (LEDs) and laser diodes (LDs). The new M-DCP method provides an improvement on measurement uncertainty by one order of magnitude compared to the unpublished differential continuous pulse method (DCP method). The DCP method was already a significant improvement of the continuous pulse method (CP method) commonly used in the LED industry. The new M-DCP method also makes it possible to measure UV-LEDs with high accuracy. Here, we present the DCP method, discuss the potential systematic error sources in it, and present the M-DCP method along with its reduced systematic errors. This paper also presents the results of validation measurement of LEDs using the M-DCP method and common test instruments.

Injecting Inter-Layers and the Built-in Potential of Blue Polymer Light-Emitting Diodes

2000 ◽  
Vol 660 ◽  
Author(s):  
Thomas M. Brown ◽  
Ian S. Millard ◽  
David J. Lacey ◽  
Jeremy H. Burroughes ◽  
Richard H. Friend ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Basic Structure ◽  
Thin Layers ◽  
Carrier Injection ◽  
Semiconducting Polymer ◽  
Light Emitting ◽  
Physical Mechanisms ◽  
Organic Solid ◽  
Polymer Light Emitting Diodes

ABSTRACTThe semiconducting-polymer/injecting-electrode heterojunction plays a crucial part in the operation of organic solid state devices. In polymer light-emitting diodes (LEDs), a common fundamental structure employed is Indium-Tin-Oxide/Polymer/Al. However, in order to fabricate efficient devices, alterations to this basic structure have to be carried out. The insertion of thin layers, between the electrodes and the emitting polymer, has been shown to greatly enhance LED performance, although the physical mechanisms underlying this effect remain unclear. Here, we use electro-absorption measurements of the built-in potential to monitor shifts in the barrier height at the electrode/polymer interface. We demonstrate that the main advantage brought about by inter-layers, such as poly(ethylenedioxythiophene)/poly(styrene sulphonic acid) (PEDOT:PSS) at the anode and Ca, LiF and CsF at the cathode, is a marked reduction of the barrier to carrier injection. The electro- absorption results also correlate with the electroluminescent characteristics of the LEDs.

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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