RESIDUAL STRESS EVOLUTION DURING ENERGETIC PARTICLE BOMBARDMENT OF THIN FILMS

Author(s):  
Amit Misra ◽  
Michael Nastasi
2021 ◽  
pp. 162799
Author(s):  
J. Chakraborty ◽  
T. Oellers ◽  
R. Raghavan ◽  
A. Ludwig ◽  
G. Dehm

1998 ◽  
Vol 287-288 ◽  
pp. 275-282 ◽  
Author(s):  
M. Ye ◽  
G. Berton ◽  
J-.L. Delplancke ◽  
M.-P. Delplancke ◽  
Luc Segers ◽  
...  

Author(s):  
Weontae Oh ◽  
Tae Joo Shin ◽  
Moonhor Ree ◽  
Moon Young Jin ◽  
Kookheon Char

1998 ◽  
Vol 546 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar

AbstractThe residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.


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