Residual Stress Evolution by the ex-situ Annealing of TiN Thin Films Deposited on Steel Substrates

1998 ◽  
Vol 287-288 ◽  
pp. 275-282 ◽  
Author(s):  
M. Ye ◽  
G. Berton ◽  
J-.L. Delplancke ◽  
M.-P. Delplancke ◽  
Luc Segers ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Ex Situ ◽  
Stress Evolution ◽  
Tin Thin Films ◽  
Steel Substrates

Film thickness effect on texture and residual stress sign transition in sputtered TiN thin films

2017 ◽  
Vol 43 (15) ◽  
pp. 11992-11997 ◽  
Author(s):  
Yeting Xi ◽  
Kewei Gao ◽  
Xiaolu Pang ◽  
Huisheng Yang ◽  
Xiaotao Xiong ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Film Thickness ◽  
Thickness Effect ◽  
Tin Thin Films

Microstructure and residual stress evolution in nanocrystalline Cu-Zr thin films

2021 ◽  
pp. 162799
Author(s):  
J. Chakraborty ◽  
T. Oellers ◽  
R. Raghavan ◽  
A. Ludwig ◽  
G. Dehm
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Stress Evolution

scholarly journals Optical Properties and Microstructure of TiNxOy and TiN Thin Films before and after Annealing at Different Conditions

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 22 ◽  
Author(s):  
Hanan A. Abd El-Fattah ◽  
Iman S. El-Mahallawi ◽  
Mostafa H. Shazly ◽  
Waleed A. Khalifa
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Pure Titanium ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Optical Absorbance ◽  
Atomic Force ◽  
Before And After ◽  
Tin Thin Films ◽  
Steel Substrates

TiN and TiNxOy thin films share many properties such as electrical and optical properties. In this work, a comparison is conducted between TiN (with and without annealing at 400 °C in air and vacuum) and TiNxOy thin films deposited by using RF magnetron sputtering with the same pure titanium target, Argon (Ar) flow rate, nitrogen flow rates, and deposition time on stainless steel substrates. In the case of TiNxOy thin film, oxygen was pumped in addition. The optical properties of the thin films were characterized by spectrophotometer, and Fourier transform infrared spectroscopy (FTIR). The morphology, topography, and structure were studied by scanning electron microscope (SEM), atomic force microscope (AFM), and X-ray diffraction (XRD). The results show that both thin films have metal-like behavior with some similarities in phases, structure, and microstructure and differences in optical absorbance. It is shown that the absorbance of TiN (after vacuum-annealing) and TiNxOy have close absorbance percentages at the visible range of light with an unstable profile, while after air-annealing the optical absorbance of TiN exceeds that of TiNxOy. This work introduces annealed TiN thin films as a candidate solar selective absorber at high-temperature applications alternatively to TiNxOy.

scholarly journals Thin film stress and microstructure analysis by energy-dispersive diffraction

2014 ◽  
Vol 70 (a1) ◽  
pp. C724-C724
Author(s):  
Christoph Genzel
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Film Growth ◽  
High Energy ◽  
Energy Dispersive ◽  
Film Stress ◽  
Ex Situ ◽  
Near Surface

The most important advantage of energy dispersive (ED) diffraction compared with angle dispersive methods is that the former provides complete diffraction patterns in fixed but arbitrarily selectable scattering directions. Furthermore, in experiments that are carried out in reflection geometry, the different photon energies E(hkl) of the diffraction lines in an ED diffraction pattern can be taken as an additional parameter to analyze depth gradients of structural properties in the materials near surface region. For data evaluation advantageous use can be made of whole pattern methods such as the Rietveld method, which allows for line profile analysis to study size and strain broadening [1] or for the refinement of models that describe the residual stress depth distribution [2]. Concerning polycrystalline thin films, the features of ED diffraction mentioned above can be applied to study residual stresses, texture and the microstructure either in ex-situ experiments or in-situ to monitor, for example, the chemical reaction pathway during film growth [3]. The main objective of this talk is to demonstrate that (contrary to a widespread opinion) high energy synchrotron radiation and thin film analysis may fit together. The corresponding experiments were performed on the materials science beamline EDDI at BESSY II which is one of the very few instruments worldwide that is especially dedicated to ED diffraction. On the basis of selected examples it will be shown that specially tailored experimental setups allow for residual stress depth profiling even in thin films and multilayer coatings as well as for fast in situ studies of film stress and microstructure evolution during film growth.

Preparation and Characterization of Nanostructured TiN Thin Films Deposited by DC Reactive MagnetronSputtering

2013 ◽  
Vol 770 ◽  
pp. 165-168 ◽  
Author(s):  
Adisorn Buranawong ◽  
Komgrit Saisereephap ◽  
Nirun Witit-Anun ◽  
Jakrapong Kaewkhao ◽  
Surasing Chaiyakun
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Surface Morphology ◽  
Deposition Time ◽  
Crystal Size ◽  
Sputtering Power ◽  
The Face ◽  
Tin Thin Films ◽  
Surface Morphologies ◽  
Steel Substrates

Titanium nitride (TiN) thin films of different crystal structure and morphologies were deposited by direct current (dc) reactive magnetron sputtering method under conditions of various deposition times (3090 min). The crystal structure, crystal size, thickness and surface morphology properties of the films were studied and the results were discussed with respect to deposition time. The films were deposited on Si (100) and stainless steel substrates with constant Ar to N2 ratio of 15:2 sccm and sputtering power of 280 W. The crystal structure was characterized by X-ray diffraction. The Scherrers formula was used to calculated crystal size. The surface morphology and thickness were evaluated by Atomic Force Microscope (AFM). The golden coloured with uniformnity of TiN films were obtained at deposition time for 30 min. The as-deposited films color was varied with the deposition times from gold, brown and dark brown. The polycrystalline films showed reflections corresponding to the (111), (200), (220) and (311) orientations of the face center cubic TiN structure. The crystallinity of the films was increased with increased the deposition times. The AFM results indicate that the grain size of surface morphologies changed through the deposition times. With increase in deposition time, the roughness and films thickness were increased from 5.0 nm to 21.0 nm and 551.0 nm to 1.4 μm, respectively.

Thermal oxidation mechanism and stress evolution in Ta thin films

2010 ◽  
Vol 25 (6) ◽  
pp. 1080-1086 ◽  
Author(s):  
Yusung Jin ◽  
Jae Yong Song ◽  
Soo-Hwan Jeong ◽  
Jeong Won Kim ◽  
Tae Geol Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Oxidation Mechanism ◽  
Ex Situ ◽  
Heating Process ◽  
Fast Diffusion ◽  
Stress Evolution ◽  
Compressive Stresses ◽  
Layered Formation ◽  
Curvature Measurements

Oxidation-induced stress evolutions in Ta thin films were investigated using ex situ microstructure analyses and in situ wafer curvature measurements. It was revealed that Ta thin films are oxidized to a crystalline TaO2 layer, which is subsequently oxidized to an amorphous tantalum pentoxide (a-Ta2O5) layer. Initial layered oxidation from Ta to TaO2 phases abruptly induces high compressive stress up to about 3.5 GPa with fast diffusion of oxygen through the Ta layer. Subsequently, it is followed by stress relaxation with the oxidation time, which is related to the slow oxidation from TaO2 to Ta2O5 phases. The initial compressive stress originates from the molar volume expansion during the layered formation of TaO2 from the Ta layer, while the relaxation of the compressive stresses is ascribed to the amorphous character of the a-Ta2O5 layer. According to Kissinger's analysis of the stress evolution during an isochronic heating process, the oxygen diffusion process through the a-Ta2O5 layer is the rate-controlling stage in the layered oxidation process of forming a a-Ta2O5/TaO2/Ta multilayer and has an activation energy of about 190.8 kJ/mol.

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