Dopant Profiling of Silicon Calibration Specimens by Off-Axis Electron Holography

2008 ◽  
pp. 399-402
Author(s):  
D Cooper ◽  
R Truche ◽  
F Laugier ◽  
F Bertin ◽  
A Chabli
Keyword(s):  
Electron Holography ◽  
Dopant Profiling ◽  
Silicon Calibration

Semiconductor dopant profiling by off-axis electron holography

2003 ◽  
Vol 94 (2) ◽  
pp. 149-161 ◽  
Author(s):  
Jing Li ◽  
M.R McCartney ◽  
David J Smith
Keyword(s):  
Electron Holography ◽  
Dopant Profiling

Electron holography for 2-D dopant profiling

2009 ◽  
Author(s):  
Michael A. Gribelyuk ◽  
Jun Yuan ◽  
Oleg Gluschenkov ◽  
Paul Ronsheim ◽  
Huiling Shang
Keyword(s):  
Electron Holography ◽  
Dopant Profiling

Semiconductor Dopant Profiling by Off-Axis Electron Holography

2001 ◽  
Vol 7 (S2) ◽  
pp. 572-573
Author(s):  
Jing Li ◽  
M.R. McCartney ◽  
David J. Smith
Keyword(s):  
Potential Distribution ◽  
Quantitative Measurement ◽  
Semiconductor Industry ◽  
Deep Submicron ◽  
Test Structure ◽  
Electron Holography ◽  
Two Dimensional ◽  
Dopant Profiling ◽  
Preparation Conditions ◽  
Voltage Contrast

Two-dimensional dopant profiling continues to be a topic of great interest and importance to the semiconductor industry. Off-axis electron holography provides access to the phase of the electron wavefront that has traversed a sample, and it thus enables voltage contrast to be visualized. The technique was used by McCartney et al. (1994) to observe the potential distribution across Si/Si p-n junctions [1], and it was later also used by Rau et al. (1999) to map the two-dimensional electrostatic potential in deep-submicron transistor structures [2]. in this paper, we have used electron holography and a known test structure to demonstrate that accurate voltage profiles can be extracted under carefully controlled sample preparation conditions. Carrier information can be obtained using a simulation program. Experimental factors that affect quantitative measurement are also discussed.The sample studied was a test structure fabricated at IBM for comparison of various profiling methods [3]. Both p-n junctions and p-p+ regions were available for study.

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