Residual Strain Variations in MBE-Grown InN Thin Films

2008 ◽  
pp. 41-44
Author(s):  
A Delimitis ◽  
Ph Komninou ◽  
J Arvanitidis ◽  
M Katsikini ◽  
S-L Sahonta ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Strain

Residual strain in deuterated Ti thin films

1998 ◽  
Vol 36 (1-4) ◽  
pp. 1-6 ◽  
Author(s):  
P Scardi ◽  
M Leoni ◽  
R Checchetto
Keyword(s):  
Thin Films ◽  
Residual Strain

Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

2001 ◽  
Vol 33 (1-4) ◽  
pp. 59-69 ◽  
Author(s):  
Keisuke Saito ◽  
Katsuyuki Ishikawa ◽  
Atsushi Saiki ◽  
Isao Yamaji ◽  
Takao Akai ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Strain ◽  
Strain Analysis

scholarly journals The effect of residual strain on twinning in shock-loaded copper

1986 ◽  
Vol 44 ◽  
pp. 422-423
Author(s):  
G.T. Gray
Keyword(s):  
Thin Films ◽  
Plastic Strain ◽  
Residual Strain ◽  
Shock Loading ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Experimental Techniques ◽  
Published Data ◽  
Loading Conditions

Under shock-loading, twinning is observed in metals that do not twin under conventional loading conditions, for example copper and nickel where the stacking fault energy is about 78 and 128 ergs/cm2, respectively. Contradictions in the published data on the twinning stress in copper (from 1.6 GPa in thin films to 14.5-20 GPa in bulk specimens suggest differences associated with experimental techniques. This study examines the role of residual plastic strain (eres) on the deformation substructures, particularly twinning, in shock-roaded copper.

Crystallographic Aspects of Ferroelectric Pzt Thin Films Prepared by Laser Deposition Technique

1991 ◽  
Vol 243 ◽  
Author(s):  
Winnie Wong-Ng ◽  
Ting C. Huang ◽  
Lawrence P. Cook ◽  
Peter K. Schenck ◽  
M.D. Vaudin ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Strain ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Peak Splitting ◽  
Diffraction Peaks ◽  
Diffraction Patterns

AbstractX-ray diffraction techniques were used to study the crystallography of PZT thin films prepared by the laser deposition technique. This investigation included identification of phases formed during the annealing process and also the analysis of the profiles of selected diffraction peaks. The PZT films annealed below 800°C typically showed powder x-ray diffraction patterns corresponding to a cubic structure (i.e no peak splitting) instead of the tetragonal patterns characteristic of the target materials. The upper bound contribution of the macro and micro strain to the observed X-ray peak profile and positions was estimated. It was believed that the combined effect of small crystallite size together with residual strain, and possible local inhomogeneity gave rise to the broadening and displacement of the x-ray peaks, which subsequently masked off the splittings. At this stage the physical effect of high temperature annealing is not known. It is possible that as the annealing temperature increased, grain growth took place along with relaxation of residual strain, allowing peak splitting to be observed.

Effect of Thermal Treatments on the Structural and Optical Properties of Thermally Deposited Polycrystalline Cu Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 335-342
Author(s):  
S.K. Mehmood ◽  
M. Mansoor ◽  
M.M. Asim ◽  
S. Zaman
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Film Thickness ◽  
Crystallite Size ◽  
Residual Strain ◽  
Infrared Region ◽  
Laser Applications ◽  
Crystallographic Preferred Orientation ◽  
Double Beam ◽  
Crystallite Sizes

Copper thin films are potentially used in optical and laser applications due to their intrinsic reflective indexes in visible and infrared region of the spectrum. The reflective properties of the thin films are mainly driven by their thickness, structure, and residual strain induced during the processing stages. Copper thin films of various thicknesses were deposited on glass slides using a thermal evaporation unit. The deposited substrates were thermally treated, in inert environment for 30 minutes, for various temperatures. Further, the substrates were characterized using various techniques. Structural studies of the thin films were carried out using XRD on the as deposited and heat treated films to study the phases, the crystallographic preferred orientation, residual strain and crystallite size. The polycrystalline Cu phase was revealed and no oxide phases were identified. The films were preferentially oriented along (111). The crystallite size increases while the residual strain decreases as the film thickness increases. The crystallite sizes were very small as compared to the film thickness. The optical properties of these coatings were investigated by double beam spectrophotometer. It was found that reflectance of these coatings strongly depends upon the film thickness and post deposition heat treatment. The optimum deposition procedure was established to obtain the enhanced reflecting power.

scholarly journals Poisson’s ratio and residual strain of freestanding ultra-thin films

2020 ◽  
Vol 137 ◽  
pp. 103821 ◽  
Author(s):  
Gayatri K. Cuddalorepatta ◽  
Wim M. van Rees ◽  
Li Han ◽  
Daniel Pantuso ◽  
L. Mahadevan ◽  
...  
Keyword(s):  
Thin Films ◽  
Residual Strain ◽  
Poisson’S Ratio ◽  
Poisson's Ratio

Novel yttrium-stabilized zirconia polymeric precursor for the fabrication of thin films

2004 ◽  
Vol 19 (9) ◽  
pp. 2708-2713 ◽  
Author(s):  
Roger M. Smith ◽  
Xiao-Dong Zhou ◽  
Wayne Huebner ◽  
Harlan U. Anderson
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Growth ◽  
Residual Strain ◽  
Annealing Temperature ◽  
Arrhenius Equation ◽  
Polymeric Precursor ◽  
Ambient Conditions ◽  
Stabilized Zirconia ◽  
Free Films

An acetate-based polymeric precursor for producing yttrium-stabilized zirconia (YSZ) was developed. The precursor was prepared under ambient conditions and contains only yttrium and zirconium cations. Dense, crack-free films were fabricated with this precursor on alumina substrates at a rate of 60 nm per deposition, producing polycrystalline YSZ at temperatures as low as 600 °C. Grain growth in thin YSZ films followed Arrhenius equation with an activation energy approximately 0.45 eV. The residual strain in YSZ films decreased with increasing annealing temperature from 600 to 900 °C.

Sign in / Sign up

Export Citation Format

Share Document