Novel yttrium-stabilized zirconia polymeric precursor for the fabrication of thin films

2004 ◽  
Vol 19 (9) ◽  
pp. 2708-2713 ◽  
Author(s):  
Roger M. Smith ◽  
Xiao-Dong Zhou ◽  
Wayne Huebner ◽  
Harlan U. Anderson
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Growth ◽  
Residual Strain ◽  
Annealing Temperature ◽  
Arrhenius Equation ◽  
Polymeric Precursor ◽  
Ambient Conditions ◽  
Stabilized Zirconia ◽  
Free Films

An acetate-based polymeric precursor for producing yttrium-stabilized zirconia (YSZ) was developed. The precursor was prepared under ambient conditions and contains only yttrium and zirconium cations. Dense, crack-free films were fabricated with this precursor on alumina substrates at a rate of 60 nm per deposition, producing polycrystalline YSZ at temperatures as low as 600 °C. Grain growth in thin YSZ films followed Arrhenius equation with an activation energy approximately 0.45 eV. The residual strain in YSZ films decreased with increasing annealing temperature from 600 to 900 °C.

Stress and Microstructure in Rf-Diode and Dc-Magnetron Sputtered Beryllium Thin Films

1991 ◽  
Vol 239 ◽  
Author(s):  
Risto H. Mutikainen
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Deposition Parameters ◽  
Film Microstructure ◽  
Columnar Grain ◽  
Free Films

ABSTRACTThe effect of deposition parameters on the properties of sputtered Be films has been studied. The parameters have been optimized to obtain stress free films. Nitrogen pulsing has been used to improve the film microstructure by suppressing the columnar grain growth.

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

2011 ◽  
Vol 191 (1) ◽  
pp. 12-23 ◽  
Author(s):  
Sebastian Heiroth ◽  
Ruggero Frison ◽  
Jennifer L.M. Rupp ◽  
Thomas Lippert ◽  
Eszter J. Barthazy Meier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Grain Growth ◽  
Pulsed Laser ◽  
Growth Characteristics ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

Activation energy and its fluctuations at grain boundaries of Er3+:BaTiO3 perovskite thin films: Effect of doping concentration and annealing temperature

Vacuum ◽  
2021 ◽  
pp. 110562
Author(s):  
J.L. Clabel H ◽  
S.N. Nazrin ◽  
G. Lozano C ◽  
M. Pereira da Silva ◽  
M. Siu Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Grain Boundaries ◽  
Doping Concentration ◽  
Annealing Temperature ◽  
Effect Of Doping

Zirconia Thin-Films for Toughened Ceramics

2006 ◽  
Author(s):  
J. Y. Thompson ◽  
B. R. Stoner ◽  
J. R. Piascik
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Film Deposition ◽  
Film Stress ◽  
Grain Structure ◽  
Ambient Conditions ◽  
High Temperature Stability ◽  
Stabilized Zirconia ◽  
Water Vapor Absorption ◽  
Absorption Mechanism

Partially-stabilized zirconia (PSZ) has been studied extensively, due to its high temperature stability and stress-induced tetragonal to monoclinic phase transformation, which can elicit enhanced fracture resistance. Applications include thermal barriers, high-k dielectric gate oxides, biomedical components, and solid oxide fuel cells, where not only temperature is a factor, but aggressive environments can compromise function. Research has advanced from using PSZ in bulk form to creating thin films that utilize the same material properties. PSZ, where the high temperature tetragonal phase is stabilized at room temperature, offers the ability to create a thin film that takes advantage of the unique properties of zirconia by improving the fracture behavior of brittle substrates. Yttria (3 mol%) stabilized zirconia (YSZ) can be deposited by radio frequency (rf) magnetron sputtering under varying deposition parameters to produce thin films with unique microstructures and properties. Most YSZ films are characterized by a columnar grain structure, and it has been found that inter-crystalline porosity and overall film density can be controlled by applying differing substrate bias during film deposition. Film stress can subsequently be manipulated over a broad range. Initial film stresses ranging from approximately 100 MPa tensile to 200 MPa compressive have been reproducibly produced. It has also been found that exposure of YSZ thin films containing measurable inter-granular porosity (10–100Å) to ambient conditions (25°C, 75% relative humidity) leads to a substantial increase in compressive stress of films (as much as 100 MPa). Thermal reversibility of this environmental aging effect suggests a water vapor absorption mechanism that might be tailored to specific applications.

Grain Growth Kinetics of Accumulative Roll Bonded AZ61 Alloy

2012 ◽  
Vol 585 ◽  
pp. 387-391 ◽  
Author(s):  
H. Shivananda Nayaka ◽  
Gajanan P. Chaudhari ◽  
B.S. Sunder Daniel
Keyword(s):  
Grain Growth ◽  
Growth Kinetics ◽  
Annealing Temperature ◽  
Isothermal Annealing ◽  
Arrhenius Equation ◽  
Growth Exponent ◽  
Az61 Magnesium Alloy ◽  
Ultrafine Grained ◽  
Grain Growth Kinetics ◽  
Kinetics Of

A detailed study was performed on the grain growth kinetics of ultrafine-grained AZ61 magnesium alloy produced by accumulative roll bonding by carrying out isothermal annealing treatments on the roll bonded samples. Annealing treatments were carried out in the temperature range 423 to 573K for 2 to 120 minutes. As the annealing time and temperature increased, the grain size increased. The effect of annealing temperature and time, on the grain growth can be well explained by the kinetic equation and Arrhenius equation. Based on the experimental results of grain growth during annealing treatments, the grain growth exponent and the activation energy for grain growth were determined. The grain growth kinetic parameters were compared with other magnesium alloys processed by various methods.

Reduced Activation Energy for Grain Growth in Nanocrystalline Yttria-Stabilized Zirconia

Nano Letters ◽  
2003 ◽  
Vol 3 (3) ◽  
pp. 397-401 ◽  
Author(s):  
Satyajit Shukla ◽  
Sudipta Seal ◽  
Rashmi Vij ◽  
Sri Bandyopadhyay
Keyword(s):  
Activation Energy ◽  
Grain Growth ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Grain Growth in Nanocrystalline Yttrium-Stabilized Zirconia Thin Films Synthesized by Spin Coating of Polymeric Precursors

2002 ◽  
Vol 2 (2) ◽  
pp. 161-169 ◽  
Author(s):  
Junhang Dong ◽  
Michael Z. Hu ◽  
E. Andrew Payzant ◽  
Timothy R. Armstrong ◽  
Paul F. Becher
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Spin Coating ◽  
Stabilized Zirconia ◽  
Polymeric Precursors

scholarly journals Influence of Post-Annealing on the Structural and Nanomechanical Properties of Co Thin Films

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 180 ◽  
Author(s):  
Yeong-Maw Hwang ◽  
Cheng-Tang Pan ◽  
Ying-Xu Lu ◽  
Sheng-Rui Jian ◽  
Huang-Wei Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Face Centered Cubic ◽  
Ambient Conditions ◽  
Nanomechanical Properties ◽  
Glass Substrates ◽  
Hexagonal Close Packed ◽  
Nanoindentation Measurement ◽  
Different Temperatures ◽  
Face Centered

The correlations between the microstructure and nanomechanical properties of a series of thermal annealed Co thin films were investigated. The Co thin films were deposited on glass substrates using a magnetron sputtering system at ambient conditions followed by subsequent annealing conducted at various temperatures ranging from 300 °C to 800 °C. The XRD results indicated that for annealing temperature in the ranged from 300 °C to 500 °C, the Co thin films were of single hexagonal close-packed (hcp) phase. Nevertheless, the coexistence of hcp-Co (002) and face-centered cubic (fcc-Co (111)) phases was evidently observed for films annealed at 600 °C. Further increasing the annealing temperature to 700 °C and 800 °C, the films evidently turned into fcc-Co (111). Moreover, significant variations in the hardness and Young’s modulus are observed by continuous stiffness nanoindentation measurement for films annealed at different temperatures. The correlations between structures and properties are discussed.

scholarly journals Effect of Annealing Temperature on The Some Electrical Properties of InSb:Bi Thin Films

2010 ◽  
Vol 7 (4) ◽  
pp. 1416-1420
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Carrier Concentration ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.

Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

1991 ◽  
Vol 49 ◽  
pp. 562-563
Author(s):  
F.-R. Chen ◽  
T. L. Lee ◽  
L. J. Chen
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Thin Films ◽  
Diffraction Pattern ◽  
Annealing Temperature ◽  
Lattice Mismatch ◽  
Si Substrate ◽  
Metal Thin Films ◽  
Transmission Electron ◽  
Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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