The Fabrication and Characterization of Spreading Resistance Temperature Sensors Using NTD Silicon

Author(s):  
Carl Derrington
Polymers ◽  
2019 ◽  
Vol 11 (10) ◽  
pp. 1549
Author(s):  
Qian Yang ◽  
Xi Wang ◽  
Xin Ding ◽  
Qiao Li

Textile temperature sensors are highly in demanded keep a real-time and accurate track of human body temperature for identification of healthy conditions or clinical diagnosis. Among various materials for textile temperature sensors, temperature-sensitive metal fibers have highest precision. However, those metal fibers are mechanically too weak, and break constantly during the weaving process. To enhance the mechanical strength of the metal fibers, this paper proposes to make wrapped metal fibers using wrapping technology, and characterize the effect of wrapped metal yarns on both mechanical properties and sensing behaviors. The wrapped yarns were woven into fabrics, forming the fabric temperature sensors. Results show that strength and maximum strain of the wrapped yarns are 2.69 and 1.82 times of pure Pt fibers. The response time of fabric temperature sensors using wrapped yarns was observed as 0.78 s and 1.1 s longer compared to that using Pt fibers when front and back sides contacted heat source, respectively. It is recommended that the wrapping method should be implemented for the protection of Pt fibers in fabric temperature sensors.


2013 ◽  
Vol 193 ◽  
pp. 170-181 ◽  
Author(s):  
J. Martinez-Quijada ◽  
S. Caverhill-Godkewitsch ◽  
M. Reynolds ◽  
L. Gutierrez-Rivera ◽  
R.W. Johnstone ◽  
...  

2009 ◽  
Author(s):  
Xiao-Kang Zhang ◽  
Delin Yan ◽  
Shupei Mo ◽  
Zhenming Nong ◽  
Zhenshi Chen

2012 ◽  
Vol 503 ◽  
pp. 43-48 ◽  
Author(s):  
Chuan Guo Dou ◽  
Yan Hong Wu ◽  
Heng Yang ◽  
Xin Xin Li

This paper reports on the development and characterization of piezoresistive stress and temperature sensors fabricated on silicon-on-insulator (SOI) wafer. The sensor chip consists of a 5x5 array elements enabling the simultaneous measurement of the absolute temperature as well as in-plane stress components in a temperature compensated manner. Each cell comprises a p-type piezoresistor rosette paralleling to the [110] crystal direction of silicon, an n-type piezoresistor rosette along the [100] crystal direction and a temperature sensor. Design, fabrication and characterization of piezoresistive and temperature sensors are described in detail. Moreover, based on the flexible printed circuit board, the prepackaging technique of sensors is reported and the electrical connections between the testing sensors and external measuring devices are achieved, then the changes in resistance versus temperature changes are measured in our experiment, the results show that this approach can be used for the signal measurement of sensor before the second packaging and on-line measurement of packaging stresses.


2019 ◽  
Vol 35 (4) ◽  
pp. 475-484
Author(s):  
SHIVA ARUN ◽  
◽  
PRABHA BHARTIYA ◽  
AMREEN NAZ ◽  
SUDHEER RAI ◽  
...  

2019 ◽  
Vol 139 (11) ◽  
pp. 375-380
Author(s):  
Harutoshi Takahashi ◽  
Yuta Namba ◽  
Takashi Abe ◽  
Masayuki Sohgawa

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