Quantum Well Infra-Red Detectors

2001 ◽  
pp. 423-456
Author(s):  
M. J. Kane
Keyword(s):  
Quantum Well ◽  
Infra Red

Performance Trade Offs in the Quantum Well Infra-Red Detector

1992 ◽  
pp. 31-42 ◽  
Author(s):  
M. J. Kane ◽  
S. Millidge ◽  
M. T. Emeny ◽  
D. Lee ◽  
D. R. P. Guy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Trade Offs ◽  
Infra Red

Quantum well infra-red photodetector response controlled by very low power visible source

1992 ◽  
Vol 28 (21) ◽  
pp. 1980 ◽  
Author(s):  
V. Berger ◽  
N. Vodjdani
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Infra Red

Optical characterisation of quantum well infra-red detector structures

1999 ◽  
Vol 146 (2) ◽  
pp. 89-92 ◽  
Author(s):  
A. Guzmán ◽  
J. M. G. Tijero ◽  
L. J. Gómez ◽  
J. Hernando ◽  
J. J. Sánchez ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infra Red

DENSITY OF STATES AND CHARGE DISTRIBUTION IN LIGHTLY DOPED AND COMPENSATED QUANTUM WELL

1989 ◽  
Vol 03 (11) ◽  
pp. 815-819
Author(s):  
E.A. DE ANDRADA E SILVA ◽  
I.C. DA CUNHA LIMA
Keyword(s):  
Quantum Well ◽  
Charge Distribution ◽  
Density Of States ◽  
Impurity Band ◽  
Band Model ◽  
Two Dimensional ◽  
Bohr Radius ◽  
Coulomb Gap ◽  
Bulk Semiconductors ◽  
Infra Red

In this letter we use a Semi-Classical Impurity Band Model and obtain by Monte Carlo simulation the density of states (DOS) and the impurity charge distribution inside a quantum well (QW) of Ga 1−x Al x As/GaAs . We show the existence of a Coulomb gap as has been observed in bulk semiconductors. The DOS is not very sensitive to the QW width close to the Coulomb gap, at least in the range from 1 to 4 times the Bohr radius, and shows a behavior D(E)∝|E−EF| which indicates a two-dimensional signature. We show that the neutral donors concentrate in the center of the well according to a distribution whose width and decay rate depend on the compensation and impurity concentration respectively. Those effects are expected to be observed by infra-red absorption experiments and useful in device diagnosis.

Normal incidence multiple spectra type-II AlAs/AlGaAs quantum well infra-red detector

1992 ◽  
Vol 28 (15) ◽  
pp. 1468 ◽  
Author(s):  
L.S. Yu ◽  
S.S. Li ◽  
P. Ho
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Type Ii ◽  
Infra Red

Two-colour quantum well infra-red photodetector with peak sensitivities at 3.9 and 8.1 µm

1994 ◽  
Vol 30 (16) ◽  
pp. 1352-1353 ◽  
Author(s):  
K.L. Tsai ◽  
C.P. Lee ◽  
J.S. Tsang ◽  
H.R. Chen
Keyword(s):  
Quantum Well ◽  
Infra Red

Long wavelength broadband normal incidence AlAs/AlGaAs X-valley quantum well infra-red phototector

1993 ◽  
Vol 29 (2) ◽  
pp. 213 ◽  
Author(s):  
Y. Zhang ◽  
N. Baruch ◽  
W.I. Wang
Keyword(s):  
Quantum Well ◽  
Normal Incidence ◽  
Long Wavelength ◽  
Infra Red

Infra-red free-carrier absorption due to impurity scattering in semiconducting quantum well structures

Pramana ◽  
1989 ◽  
Vol 32 (2) ◽  
pp. 149-159 ◽  
Author(s):  
N S Sankeshwar ◽  
S S Kubakaddi ◽  
B G Mulimani
Keyword(s):  
Quantum Well ◽  
Impurity Scattering ◽  
Free Carrier ◽  
Free Carrier Absorption ◽  
Quantum Well Structures ◽  
Infra Red ◽  
Carrier Absorption
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