Quantum well infra-red photodetector response controlled by very low power visible source

1992 ◽  
Vol 28 (21) ◽  
pp. 1980 ◽  
Author(s):  
V. Berger ◽  
N. Vodjdani
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Infra Red

Performance Trade Offs in the Quantum Well Infra-Red Detector

1992 ◽  
pp. 31-42 ◽  
Author(s):  
M. J. Kane ◽  
S. Millidge ◽  
M. T. Emeny ◽  
D. Lee ◽  
D. R. P. Guy ◽  
...  
Keyword(s):  
Quantum Well ◽  
Trade Offs ◽  
Infra Red

scholarly journals Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications

2008 ◽  
Vol 29 (10) ◽  
pp. 1094-1097 ◽  
Author(s):  
G. Dewey ◽  
M.K. Hudait ◽  
Kangho Lee ◽  
R. Pillarisetty ◽  
W. Rachmady ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
High Speed ◽  
Carrier Transport ◽  
High Mobility ◽  
Performance Impact ◽  
And Performance ◽  
Low Power Logic

Broadband low-power amplifier with high gain and mixer modes using quantum-well GaAs FET technology

1992 ◽  
Vol 28 (13) ◽  
pp. 1241 ◽  
Author(s):  
P. Wennekers ◽  
R. Bosch ◽  
W. Reinert ◽  
A. Huelsmann ◽  
G. Kaufel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Power Amplifier ◽  
High Gain

Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C

2016 ◽  
Vol 94 (7) ◽  
pp. 640-644 ◽  
Author(s):  
Santosh Chackrabarti ◽  
Dhrub Sharma ◽  
Shereena Joseph ◽  
Tho-alfiqar A. Zaker ◽  
A.K. Hafiz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Band Gap ◽  
Characteristic Temperature ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Threshold Current ◽  
Multiple Quantum ◽  
Spectral Shifts ◽  
Band Gap Narrowing

We report on the temperature-dependent spectral shifts in low power 670 nm AlGaInP multiple quantum well red laser diodes due to band gap narrowing at room temperatures (5–45 °C). The spectral shift mechanism is explored with a threshold current density of 11.41 kA/cm2 and a good characteristic temperature of 114 K. The photoluminescence peak intensity shifts towards higher wavelengths and the full width at half maximum increases with increase in temperature from 5 to 45 °C. We use a Hamiltonian system considering the effective mass approximation to formulate the carrier concentrations. The band gap narrowing value determined by a simple formula amounts to 59.15 meV and displays N1/3 dependence at higher densities. The carrier density dependence conveys that the redshift of the spectral emission is due to band gap narrowing.

Demonstration of low-power nonlinearity in InGaAs/InP multiple-quantum-well waveguides

1993 ◽  
Author(s):  
Domenico Campi ◽  
C. Cacciatore ◽  
Claudio Coriasso ◽  
Cesare F. Rigo ◽  
Heinz-Christoph Neitzert
Keyword(s):  
Quantum Well ◽  
Low Power ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Power Nonlinearity
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