Optical Properties of InGaAs/GaAs Quantum Well Heterostructures: Excitation Energy Dependence

In this work, the optical absorption coefficients and the refractive index changes for the infinite and finite semi-parabolic quantum well are calculated. Numerical calculations are performed for typical GaAs / Al x Ga 1-x As semi-parabolic quantum well. The energy eigenvalues and eigenfunctions of these systems are calculated numerically. Optical properties are obtained using the compact density matrix approach. Results show that the energy eigenvalues and the matrix elements of the infinite and finite cases are different. The calculations reveal that the resonant peaks of the optical properties of the finite case occur at lower values of the incident photon energy with respect to the infinite case. Results indicate that the maximum value of the refractive index changes for the finite case are greater than that of the infinite case. Our calculations also show that in contrast to the infinite case, the resonant peak value of the total absorption coefficient in the case of the finite well is a non-monotonic function of the semi-parabolic confinement frequency.

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Optical properties of GaBiAs single quantum well structures grown by MBE

Semiconductor Science and Technology ◽

10.1088/0268-1242/30/9/094016 ◽

2015 ◽

Vol 30 (9) ◽

pp. 094016 ◽

Cited By ~ 13

Author(s):

O Donmez ◽

A Erol ◽

M C Arikan ◽

H Makhloufi ◽

A Arnoult ◽

...

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Structures

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Toward quantum well wires: Fabrication and optical properties

Applied Physics Letters ◽

10.1063/1.93610 ◽

1982 ◽

Vol 41 (7) ◽

pp. 635-638 ◽

Cited By ~ 398

Author(s):

P. M. Petroff ◽

A. C. Gossard ◽

R. A. Logan ◽

W. Wiegmann

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Quantum Well Wires

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Magneto-optical properties of n-type modulation-doped (Cd,Cr)Te quantum well

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2007.08.105 ◽

2008 ◽

Vol 40 (5) ◽

pp. 1166-1168 ◽

Cited By ~ 6

Author(s):

Fumiyoshi Takano ◽

Takayuki Nishizawa ◽

JeungWoo Lee ◽

Shinji Kuroda ◽

Yasutaka Imanaka ◽

...

Keyword(s):

Optical Properties ◽

Quantum Well

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OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156407004266 ◽

2007 ◽

Vol 17 (01) ◽

pp. 81-84

Author(s):

J. Senawiratne ◽

M. Zhu ◽

W. Zhao ◽

Y. Xia ◽

Y. Li ◽

...

Keyword(s):

Optical Properties ◽

Quantum Well ◽

Stark Effect ◽

Light Emitting Diode ◽

Chemical Vapor ◽

Green Emission ◽

Luminescence Spectroscopy ◽

Light Emitting ◽

Quantum Confined Stark Effect ◽

Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

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