Millimeter Wave Transmission Studies of YBa2Cu3O7−δ Thin Films in the 26.5 to 40.0 GHz Frequency Range

1990 ◽  
pp. 735-748 ◽  
Author(s):  
F. A. Miranda ◽  
W. L. Gordon ◽  
K. B. Bhasin ◽  
V. O. Heinen ◽  
J. D. Warner ◽  
...  
Keyword(s):  
Thin Films ◽  
Millimeter Wave ◽  
Wave Transmission ◽  
Frequency Range ◽  
Transmission Studies

scholarly journals Low temperature penetration depth and the effect of quasi-particle scattering measured by millimeter wave transmission in YBa Cu O thin films

1998 ◽  
Vol 5 (4-6) ◽  
pp. 847-858 ◽  
Author(s):  
S. Djordjevic ◽  
L.A. de Vaulchier ◽  
N. Bontemps ◽  
J.P. Vieren ◽  
Y. Guldner ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Penetration Depth ◽  
Millimeter Wave ◽  
Wave Transmission ◽  
Particle Scattering ◽  
Quasi Particle

Characterization of superconducting thin films using millimeter wave transmission

1996 ◽  
Author(s):  
B. J. Feenstra ◽  
F. C. Klaassen ◽  
Dirk van der Marel ◽  
Zoe H. Barber ◽  
R. Perez Pinaya ◽  
...  
Keyword(s):  
Thin Films ◽  
Millimeter Wave ◽  
Wave Transmission ◽  
Superconducting Thin Films

scholarly journals Photothermal, Photoelectric, and Photothermoelectric Effects in Bi-Sb Thin Films in the Terahertz Frequency Range at Room Temperature

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 76
Author(s):  
Mikhail K. Khodzitsky ◽  
Petr S. Demchenko ◽  
Dmitry V. Zykov ◽  
Anton D. Zaitsev ◽  
Elena S. Makarova ◽  
...  
Keyword(s):  
Thin Films ◽  
Terahertz Radiation ◽  
Room Temperature ◽  
Voltage Drop ◽  
Radiation Detection ◽  
Radiation Detectors ◽  
Thz Radiation ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range

The terahertz frequency range is promising for solving various practically important problems. However, for the terahertz technology development, there is still a problem with the lack of affordable and effective terahertz devices. One of the main tasks is to search for new materials with high sensitivity to terahertz radiation at room temperature. Bi1−xSbx thin films with various Sb concentrations seem to be suitable for such conditions. In this paper, the terahertz radiation influence onto the properties of thermoelectric Bi1−xSbx 200 nm films was investigated for the first time. The films were obtained by means of thermal evaporation in vacuum. They were affected by terahertz radiation at the frequency of 0.14 terahertz (THz) in the presence of thermal gradient, electric field or without these influences. The temporal dependencies of photoconductivity, temperature difference and voltage drop were measured. The obtained data demonstrate the possibility for practical use of Bi1−xSbx thin films for THz radiation detection. The results of our work promote the usage of these thermoelectric materials, as well as THz radiation detectors based on them, in various areas of modern THz photonics.

Enhanced millimeter wave transmission through quasioptical subwavelength perforated plates

2005 ◽  
Vol 53 (6) ◽  
pp. 1897-1903 ◽  
Author(s):  
M. Beruete ◽  
M. Sorolla ◽  
I. Campillo ◽  
J.S. Dolado ◽  
L. Martin-Moreno ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Wave Transmission ◽  
Perforated Plates

Subwavelength slotted corrugated plate with enhanced quasioptical millimeter wave transmission

2005 ◽  
Vol 15 (4) ◽  
pp. 286-288 ◽  
Author(s):  
M. Beruete ◽  
M. Sorolla ◽  
I. Campillo ◽  
J.S. Dolado
Keyword(s):  
Millimeter Wave ◽  
Wave Transmission

Preferential orientation and relaxation behaviors of CaCu3Ti4O12 thin films in a low frequency range

2017 ◽  
Vol 704 ◽  
pp. 676-682 ◽  
Author(s):  
Kang Sun ◽  
Ling-Fang Xu ◽  
Cong Mao ◽  
Xing Feng ◽  
Jia-Yu Liang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Frequency ◽  
Preferential Orientation ◽  
Frequency Range

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

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