Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Effect of Annealing Temperatures and Pre-Heating on the Characteristics of a Nanocrystalline Zno Thin Film Prepared by the Sol-Gel Dip-Coating Method

2008 ◽  
Vol 63 (7-8) ◽  
pp. 440-444 ◽  
Author(s):  
Mohammad Hossein Habibi ◽  
Mohammad Khaledi Sardashti
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Dip Coating ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
Annealing Temperatures ◽  
Coating Method ◽  
Dip Coating Method

For effectively fabricating nanocrystalline ZnO thin films by the sol-gel method, the relationships between the temperature of the heat treatment and the quality of the ZnO thin films was observed. The decomposition of the sol was analyzed by TG-DTA. The orientation of the c-axis of the ZnO thin film was identified by XRD. The morphology was observed and estimated by SEM. The experimental results did show that the orientation of the c-axis is determined by the pre-heating and annealing temperatures, and that the grain size and roughness of the ZnO thin films are mainly influenced by the annealing temperature. A qualified ZnO thin film was prepared by using a sol-gel with a preheating temperature of 275 °C for 10 min and an annealing temperature of 550 °C for 60 min.

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

Photocatalytic Activities of Ce3+-Doped TiO2 Thin Films Prepared by Sol-Gel Method

2011 ◽  
Vol 239-242 ◽  
pp. 1850-1853
Author(s):  
Shu Kai Zheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Photocatalytic Activity ◽  
Sol Gel ◽  
Atomic Ratio ◽  
Gel Method ◽  
Sol Gel Method ◽  
Annealing Temperatures ◽  
Glass Slides ◽  
Photocatalytic Activities

A series of TiO2 thin films with and without Ce3+ doping were successfully obtained on microscope glass slides by sol-gel method. The photocatalytic activities of the pure TiO2 and Ce3+-doped TiO2 thin films were evaluated by the degradation of rhodamine B solution. The effects of both Ce3+ contents and annealing temperatures on the photocatalytic activities of the samples were examined. The results indicated that the TiO2 thin film with an atomic ratio of Ti:Ce=5:1 annealed at 300°C had a higher photocatalytic activity among the samples.

Characterization of MgZnO Thin Film for 1 GHz MMIC Applications

2013 ◽  
Vol 832 ◽  
pp. 310-315
Author(s):  
R. Ahmad ◽  
M.S. Shamsudin ◽  
M. Salina ◽  
S.M. Sanip ◽  
M. Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Loss Tangent ◽  
Integrated Circuit ◽  
Annealing Temperature ◽  
Dielectric Material ◽  
Sol Gel ◽  
Size Reduction ◽  
High Frequencies

MgZnO thin films are proposed as a new dielectric material for 1 GHz monolithic microwave integrated circuit (MMIC) applications. The high permittivity of this material enables size reduction; furthermore this can be fabricated using a low cost processing method. In this work, MgZnO/Pt/Si thin films were synthesized using a sol-gel spin coating method. The samples were annealed at various temperatures with the effects on physical and electrical properties investigated at direct current (DC) and high frequencies. The physical properties of MgZnO thin film were analyzed using X-Ray diffraction, with the improvements shown in crystalline structure and grain size with increasing temperature up to 700 °C. DC resistivity of 77 Ωcm at higher annealing temperature obtained using a four point probe station. In order to prove the feasibility at high frequencies, a test structure consisting of a 50 Ω transmission line and capacitors with 50 × 50 μm electrode area were patterned on the films using electron beam lithography. The radio frequency (RF) properties were measured using aWiltron 37269Avector network analyzer andCascade Microtechon-wafer probes measured over a frequency range of 0.5 to 3 GHz. The dielectric constant, loss tangent and return loss, S11improve with the increment annealing temperature. The dielectric constant was found to be 18.8, with loss tangent of 0.02 at 1 GHz. These give a corresponding size reduction of ten times compared to conventional dielectrics, silicon nitride (Si3N4). These indicate that the material is suitable to be implemented as a new dielectric material for 1GHz MMIC applications.

scholarly journals Determination of growth kinetics and size dependent structural, morphological, optical characteristics of sol-gel derived silica nanoparticles in silica matrix

2019 ◽  
Vol 37 (1) ◽  
pp. 16-24
Author(s):  
Bengü Özuğur Uysal ◽  
Fatma Z. Tepehan
Keyword(s):  
Thin Films ◽  
Silica Nanoparticles ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Silica Film ◽  
Silica Sol ◽  
Nano Silica ◽  
Silica Films ◽  
Annealing Temperatures ◽  
Silica Thin Films

AbstractNanocomposite silica thin films made using the sol-gel method were studied. The nano-silica films were prepared using a mixture of tetraethyl orthosilicate (TEOS), deionized water, ethanol, and ammonia solution. To control the growth of the particles inside the film, the nanocomposite silica film was prepared using a mixture of the nano-silica sol and the silica sol. The change in the particle size with the heat treatment temperature ranging from 450 °C to 1100 °C was investigated. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), NKD (refractive index-N, extinction coefficient-K, and thickness-D) and ultraviolet-visible (UV-Vis) spectrophotometry were used for characterization purposes. The XRD studies showed that the nano-silica thin films were amorphous at all annealing temperatures except for 1100 °C. The_-cristobalite crystal structure formed at the annealing temperature of 1100 °C. Optical parameters, such as refractive indices and extinction coefficients, were obtained using the NKD analyzer with respect to the annealing temperature of the films. The activation energy and enthalpy of the nanocomposite silica film were evaluated as 22.3 kJ/mol and 14.7 kJ/mol, respectively. The cut-off wavelength values were calculated by means of extrapolation of the absorbance spectra estimated using the UV-Vis spectroscopy measurements. A red shift in the absorption threshold of the nanocomposite silica films indicated that the size of the silica nanoparticles increased with an increase of the annealing temperatures from 450 °C to 900 °C, and this confirms the quantum confinement effect in the nanoparticles.

Effect of Annealing Temperature on The Refrective Index and Dielectric Properties of TiO2/MnO2 CORE/SHELL Thin Films

2014 ◽  
Vol 6 (3) ◽  
pp. 1227-1232
Author(s):  
Peter Ekuma Agbo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Dielectric Properties ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Xrd Analysis ◽  
Core Shell ◽  
Structural Nature ◽  
Deposited Film

Thin film of the form TiO2/MnO2 was deposited using the chemical bath method. The deposited thin films were annealed at temperatures of in order to investigate the effect of annealing temperature on the refractive index and dielectric property. To do this the films were characterized using UV-Spectrophotometer and XRD analysis was also carriedout to study the structural nature of the deposited film. Our results reaveled that annealing has profound effect on theindex of refraction and the dielectric properties.  

Effect of Annealing Treatments on Mg(Zr0.05Ti0.95)O3 Thin Films by Sol-Gel Method

2011 ◽  
Vol 216 ◽  
pp. 518-522
Author(s):  
Ching Fang Tseng ◽  
Chun Hung Lai ◽  
Chih Wen Lee
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Annealing Temperature ◽  
Substrate Surface ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Annealing Temperatures ◽  
Polycrystalline Microstructure ◽  
Deposited Films

Dielectric, Optical properties and microstructures of Mg(Zr0.05Ti0.95)O3 thin films prepared by sol-gel method on n-type Si(100) substrates at different annealing temperatures have been investigated. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited Mg(Zr0.05Ti0.95)O3 peaks orientation perpendicular to the substrate surface and the grain size with the increase in the annealing temperature. A dielectric constant of 7.4 and an optical bandgap of 3.7 were obtained for the prepared films.

Electrical Properties of Nanostructured Titanium Dioxide Thin Films Prepared by Sol-Gel Spin-Coating Method

2011 ◽  
Vol 312-315 ◽  
pp. 1027-1031
Author(s):  
Mohd Noor Asiah ◽  
Mat Zain Basri ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Titanium Dioxide ◽  
Electrical Properties ◽  
Spin Coating ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Nanostructured Titanium ◽  
Annealing Temperatures ◽  
Vis Spectroscopy

This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.

Influence of Thermal Annealing on the Properties of Sol-Gel-Derived Al:ZnO Thin Films

2015 ◽  
Vol 1109 ◽  
pp. 186-190
Author(s):  
Mohd Firdaus Malek ◽  
Mohamad Hafiz Mamat ◽  
M.Z. Musa ◽  
M. Rusop
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Annealing Temperature ◽  
Film Growth ◽  
Sol Gel ◽  
Visible Region ◽  
Dip Coating ◽  
Granular Structure ◽  
Annealing Temperatures ◽  
Average Transmittance

Aluminium doped zinc oxide (Al:ZnO) thin films were prepared by a sol-gel dip coating process. In particular, the case of change of thermal annealing temperature was studied. The characterisation of the films by various analytical methods shows a correlation between thermal annealing temperature and characteristic of the film. The influence of the thermal annealing temperature on the film growth can be clearly observed. At lower thermal annealing temperatures, granular structure dominates the films, while the films feature a bigger grain growth at higher annealing temperatures. All films exhibited an average transmittance of greater than 85% in the visible region, with absorption edges at ~380 nm.

Influence of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Sol-Gel SnO2 Thin Films

2018 ◽  
Vol 52 ◽  
pp. 15-20 ◽  
Author(s):  
Ji Tao Li ◽  
Ding Yu Yang ◽  
Xing Hua Zhu ◽  
Xu Li ◽  
Shu Qi Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Energy Gap ◽  
Raw Materials ◽  
Sol Gel ◽  
Optical Energy Gap ◽  
Sem Images ◽  
Rutile Structure ◽  
Chloride Dihydrate

SnO2 thin films were prepared on glass substrates by sol-gel spin coating method using stannous chloride dihydrate and ethyl alcohol absolute as raw materials at annealing temperature 450-550 °C. The crystal phase was measured by X-ray diffraction (XRD) and showed tetragonal rutile structure with a preferential orientation of (110). Atomic force microscope (AFM) and Scanning Electron Microscope (SEM) images revealed the homogeneous grains distribution, and SEM images showed the obvious rectangular objects corresponding to tetragonal structure. Optical properties were observed by the transmittance in ultraviolet-visible (UV-Vis) region and optical energy gap, which revealed the transmittance over 75% and energy gap between 3.84 eV and 3.89 eV. Finally, I-V characteristics were tested to research electrical properties, and found the gradual non-linear property and the increase of resistance.

Sign in / Sign up

Export Citation Format

Share Document