Analytical Model Developed to Estimate Self-Heating Potential

2019 ◽  
pp. 129-170
Author(s):  
Xinyang Wang
Keyword(s):  
Analytical Model ◽  
Self Heating

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

Analytical model for self-heating in nanowire geometries

2013 ◽  
Vol 113 (23) ◽  
pp. 234306 ◽  
Author(s):  
D. Patrick Hunley ◽  
Stephen L. Johnson ◽  
Roel L. Flores ◽  
Abhishek Sundararajan ◽  
Douglas R. Strachan
Keyword(s):  
Analytical Model ◽  
Self Heating

Analytical model for electrical and thermal transients of self-heating semiconductor devices

1998 ◽  
Vol 46 (12) ◽  
pp. 2258-2263 ◽  
Author(s):  
Yu Zhu ◽  
J.K. Twynam ◽  
M. Yagura ◽  
M. Hasegawa ◽  
T. Hasegawa ◽  
...  
Keyword(s):  
Analytical Model ◽  
Semiconductor Devices ◽  
Thermal Transients ◽  
Self Heating

ANALYTICAL MODEL OF SUPEREXCHANGE

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-911-C8-912
Author(s):  
Yu. V. Rakitin ◽  
V. T. Kalinnikov
Keyword(s):  
Analytical Model
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