Analytical model for the AlGaAs/GaAs multiemitter finger HBT including self-heating and thermal coupling effects

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

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Analysis of thermal coupling effects in integrated MIMO transmitters

2017 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2017.8058692 ◽

2017 ◽

Cited By ~ 5

Author(s):

Emanuel Baptista ◽

Koen Buisman ◽

Joao Caldinhas Vaz ◽

Christian Fager

Keyword(s):

Thermal Coupling ◽

Coupling Effects

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Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

Circuit World ◽

10.1108/cw-10-2016-0046 ◽

2017 ◽

Vol 43 (1) ◽

pp. 38-42 ◽

Cited By ~ 4

Author(s):

Krzysztof Górecki ◽

Damian Bisewski ◽

Janusz Zarębski ◽

Ryszard Kisiel ◽

Marcin Myśliwiec

Keyword(s):

Silicon Carbide ◽

Design Methodology ◽

Schottky Diodes ◽

Semiconductor Materials ◽

Thermal Coupling ◽

Internal Temperature ◽

Content Type ◽

Self Heating ◽

The Common ◽

Transient Thermal

Purpose This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. Design/methodology/approach The idea of measurements of mutual transient thermal impedances of the investigated device is described. Findings The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. Research limitations/implications The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. Originality/value The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

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