A Comprehensive Characterization of Stress Relaxed ZnO Thin Film at Wafer Level

Author(s):  
Priyanka Joshi ◽  
Jitendra Singh ◽  
V. K. Jain ◽  
Jamil Akhtar
2020 ◽  
Vol 32 ◽  
pp. 261-263 ◽  
Author(s):  
Ashish Kumar ◽  
Surendra Kumar Saini ◽  
Girraj Sharma ◽  
Arun Kishor Johar
Keyword(s):  

Optik ◽  
2018 ◽  
Vol 166 ◽  
pp. 317-322 ◽  
Author(s):  
Abdelhamid Bouaine ◽  
Amira Bourebia ◽  
Hassan Guendouz ◽  
Zineb Riane

2007 ◽  
Vol 336-338 ◽  
pp. 585-588 ◽  
Author(s):  
Dao Qi Xue ◽  
Jun Ying Zhang ◽  
Hai Bing Feng ◽  
Tian Min Wang

ZnO:Eu3+ films were obtained by dip-coating method and influence of heat treatment on luminescent properties was investigated. Emission and excitation spectra revealed that the organic and nitrate molecules, which adhered on the surface of films when the samples were treated at lower temperatures (300oC-400oC), played an important role on the luminescent properties. At higher temperatures (500oC-800oC), the luminescence spectra of ZnO and Eu3+ were quite different with those treated at lower temperatures. Energy transferred from ZnO host to Eu3+ was obviously observed in the emission and excitation spectra. The luminescence mechanism was discussed briefly.


Author(s):  
Omar A. Carrasco-Jaim ◽  
O. Ceballos-Sanchez ◽  
Leticia M. Torres-Martínez ◽  
Edgar Moctezuma ◽  
Christian Gómez-Solís

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