Solution Growth of CdZnTe Crystals for X-Ray Detector

2021 ◽  
pp. 285-306
Author(s):  
Song Zhang ◽  
Bangzhao Hong ◽  
Lili Zheng ◽  
Hui Zhang ◽  
Cheng Wang ◽  
...  
Keyword(s):  
Solution Growth ◽  
X Ray

Effect of Surface Polarity on the Conversion of Threading Dislocations in Solution Growth

2013 ◽  
Vol 740-742 ◽  
pp. 15-18 ◽  
Author(s):  
Yuji Yamamoto ◽  
S. Harada ◽  
Kazuaki Seki ◽  
Atsushi Horio ◽  
Takato Mitsuhashi ◽  
...  
Keyword(s):  
Grown Crystal ◽  
The Other ◽  
Solution Growth ◽  
Threading Dislocations ◽  
Surface Polarity ◽  
Screw Dislocations ◽  
X Ray ◽  
Almost All ◽  
Edge Dislocations ◽  
Effect Of Surface

We investigated the dislocation behaviors during the solution growth on Si-face and C-face off-axis 4H-SiC seed crystals by using synchrotron X-ray topography. On Si-face, almost all threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are converted into Frank-type defects and basal plane dislocations (BPDs), respectively. On the other hand, on C-face, TSDs were hardly converted. Some of TEDs were converted to BPDs and BPD-TED reconversion was often occurred. Therefore, to reduce density of threading dislocations in the grown crystal, it is better to use Si-face off-axis seed crystal.

Formation of Basal Plane Dislocations Introduced by Collision of Macrosteps on Growth Surface during SiC Solution Growth

2017 ◽  
Vol 897 ◽  
pp. 28-31
Author(s):  
Tsukasa Hori ◽  
Kenta Murayama ◽  
S. Harada ◽  
S. Xiao ◽  
M. Tagawa ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Surface Morphology ◽  
Basal Plane ◽  
The Other ◽  
Solution Growth ◽  
Interference Microscopy ◽  
Growth Surface ◽  
X Ray ◽  
Top Seeded Solution Growth ◽  
The Relationship

The relationship between surface morphology and spatial distribution of basal plane dislocations in 4H-SiC crystal grown by top-seeded solution growth on the C face was investigated by the differential interference microscopy as well as X-ray topography. Basal plane dislocations were generated at the boundaries of the domains with the different macrosteps advance directions. On the other hand, at the position where macrosteps advance to the same direction, BPDs were hardly observed. This results suggest that BPD density can be decreased by the suppression of the collision of macrosteps during the solution growth on the C face controlling the surface morphology.

Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method

2014 ◽  
Vol 1698 ◽  
Author(s):  
Jianqiu Guo ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
Joan J. Carvajal ◽  
Ali Butt ◽  
...  
Keyword(s):  
Growth Process ◽  
Solution Growth ◽  
Crystalline Quality ◽  
Defect Structures ◽  
Growth Sector ◽  
High Quality ◽  
X Ray ◽  
Linear Defects ◽  
Top Seeded Solution Growth

ABSTRACTDefect structures in Rubidium Titanyl Phosphate (RTP) crystals (non-doped and doped) grown by the Top Seeded Solution Growth (TSSG) method were characterized using Synchrotron White Beam X-ray Topography. Main defects observed in non-doped crystals are growth sector boundaries while both growth sector boundaries and growth striations are observed in the Nb single doped and (Nb,Yb)-codoped crystals with relatively few linear defects such as dislocations. Results show that the overall crystalline quality is lowered as more doping elements are incorporated. Details of defect distributions are correlated with the growth process to facilitate high quality growth of doped RTP.

Solution Growth and Characterization of Icosahedral Boron Arsenide (B12As2)

2011 ◽  
Vol 1307 ◽  
Author(s):  
C.E. Whiteley ◽  
Y. Zhang ◽  
A. Mayo ◽  
J.H. Edgar ◽  
Y. Gong ◽  
...  
Keyword(s):  
Room Temperature ◽  
Solution Growth ◽  
High Quality ◽  
Burgers Vector ◽  
X Ray ◽  
Dislocation Densities ◽  
Boron Arsenide ◽  
Viable Method ◽  
Molten Nickel

ABSTRACTThe crystallographic properties of bulk icosahedral boron arsenide (B12As2) crystals grown by precipitation from molten nickel solutions were characterized. Large crystals (5-8 mm) were produced by dissolving the boron in nickel at 1150°C for 48-72 hours, reacting with arsenic vapor, and slowly cooling to room temperature. The crystals varied in color from black and opaque to clear and transparent. Raman spectroscopy, x-ray topography (XRT), and defect selective etching revealed that the B12As2 single crystals were high quality with low dislocation densities. Furthermore, XRT results suggest that the major face of the plate-like crystals was (111) type, while (100), (010) and (001) type facets were also observed optically. The predominant defect in these crystals was edge character growth dislocations with a <001> Burgers vector, and <-110> line direction. In short, XRT characterization shows that solution growth is a viable method for producing good quality B12As2 crystals.

An X-ray diffractometry study of LaB6single crystals, prepared by high-temperature solution growth

1984 ◽  
Vol 168 (1-4) ◽  
pp. 299-306 ◽  
Author(s):  
M. M. Korsukova ◽  
T. Lundström ◽  
V. N. Gurin ◽  
L.-E. Tergenius
Keyword(s):  
High Temperature ◽  
Solution Growth ◽  
High Temperature Solution ◽  
X Ray ◽  
Temperature Solution

scholarly journals Electronic‐Grade High‐Quality Perovskite Single Crystals by a Steady Self‐Supply Solution Growth for High‐Performance X‐ray Detectors

2020 ◽  
Vol 32 (33) ◽  
pp. 2001540 ◽  
Author(s):  
Wenzhen Wang ◽  
Hua Meng ◽  
Huanzhen Qi ◽  
Haitao Xu ◽  
Wenbin Du ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Solution Growth ◽  
High Quality ◽  
X Ray

Solution growth and properties of octadecyl hydrogen succinate crystals for ultrasoft X-ray spectroscopy

1993 ◽  
Vol 26 (8B) ◽  
pp. B190-B192
Author(s):  
Lin Jingzhen ◽  
Gao Shaokang ◽  
Guan Tietang
Keyword(s):  
Solution Growth ◽  
X Ray
Sign in / Sign up

Export Citation Format

Share Document